Related papers: Suspending Effect on Low-Frequency Charge Noise in…
Low-frequency 1/f noise is ubiquitous, and dominates the signal-to-noise performance in nanodevices. Here we investigate the noise characteristics of single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f noise…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^\alpha$ over 5 decades with $\alpha = 1.93$ and a magnitude…
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components…
We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing…
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…
Shot noise measurements in quantum point contacts are a powerful tool to investigate charge transport in the integer and fractional quantum Hall regime, in particular to unveil the charge, quantum statistics and tunneling dynamics of edge…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with…
Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer…
The structure of edge modes at the boundary of quantum Hall (QH) phases forms the basis for understanding low energy transport properties. In particular, the presence of ``upstream'' modes, moving against the direction of charge current…
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is…
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is…
We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total…