Related papers: Second order resonant Raman scattering in single l…
Raman spectra of few-layer MoSe2 were measured with 8 excitation energies. New peaks that appear only near resonance with various exciton states are analyzed, and the modes are assigned. The resonance profiles of the Raman peaks reflect the…
We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Ba$_{2}$Ti$_{2}$Fe$_{2}$As$_{4}$O$_{2}$ ($T_c = 21$ K). We observe seven out of eight Raman active modes, with frequencies in good accordance…
We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for…
Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force…
A consistent calculation of resonant inelastic (Raman) scattering amplitudes for relatively large quantum dots, which takes account of valence-band mixing, discrete character of the spectrum in intermediate and final states, and…
The bosonisation technique is used to calculate the resonant Raman spectrum of a quantum wire with two electronic sub-bands occupied. Close to resonance, the cross section at frequencies in the region of the inter sub-band transitions shows…
We compare the main feature of the measured Raman scattering spectra from single layer graphene with a bilayer in which the two layers are arbitrarily misoriented. The profiles of the 2D bands are very similar having only one component,…
We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The…
We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…
Twisted bilayer two-dimensional transition-metal dichalgocenides (TMDCs) exhibit a range of novel phenomena such as the formation of moir\'e excitons and strongly correlated phases. The coupling between the layers is crucial for the…
Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…
We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin)…
Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence…
Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to…
We present the first experimental evidence of stimulated Raman re-scattering of a laser in plasma: The scattered light produced by the Raman instability is intense enough to scatter again through the same instability. Although never…
Surface enhanced Raman scattering mediated by surface plasmons polaritons with wave vector much larger than those of light is considered. The excitation of these polaritons and their efficient Raman scattering due to low group velocity and…
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and…
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$…
We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…