Related papers: Nonlinear valley and spin currents from Fermi pock…
Pure currents comprise the flow of a two state quantum freedom -- for example the electron spin -- in the absence of charge flow. Radically different from the charge currents that underpin present day electronics, in two dimensional…
Spin and valley dependent anomalous Nernst effect are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
Had magnetic monopoles been ubiquitous as electrons are, we would probably have had a different form of matter, and power plants based on currents of these magnetic charges would have been a familiar scene of modern technology. Magnetic…
The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The…
We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction…
It has recently been realized that the first-order moment of the Berry curvature, namely the Berry curvature dipole (BCD) can give rise to non-linear current in a wide variety of time-reversal invariant and non-centrosymmetric materials.…
Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…
Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…
We theoretically propose a nonreciprocal spin Seebeck effect, i.e., nonreciprocal spin transport generated by a temperature gradient, in antiferromagnetic insulators with broken inversion symmetry. We find that nonreciprocity in…
We report the existence of regimes of the two dimensional Fermi liquid that show unusual conservation of the spin current and may be tuned by varying some parameter like the density of fermions. We show that for reasonable models of the…
Antiferromagnetic materials with spin splitting have attracted considerable attention for their symmetry-enabled anisotropic spin textures that sustain a zero net magnetization, thereby facilitating efficient spin-current generation. In…
We revisit the transport of spin-degrees of freedom across an electrically and thermally biased tunnel junction between two ferromagnets with non-collinear magnetizations. Besides the well-known charge and spin currents we show that a…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
We explore the physics of novel fermion liquids emerging from conducting networks, where 1D metallic wires form a periodic 2D superstructure. Such structure naturally appears in marginally-twisted bilayer graphenes, moire transition metal…