Related papers: Single atom impurity in a Single Molecular Transis…
We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulate the…
We consider bosonic atoms in an optical lattice at integer filling, tuned to the superfluid-Mott insulator critical point, and coupled to a single, mobile impurity atom of a different species. This setup is inspired by current experiments…
The role of impurities as experimental probes in the detection of quantum material properties is well appreciated. Here we study the effect of a single classical magnetic impurity in trapped ultracold Fermi superfluids. Depending on its…
We present a model of two Anderson impurities coupled to and through a superconducting island. The model parametrizes the strength of the coupling between impurity sites, allowing it to represent a variable distance between the impurities.…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
Theoretical work has suggested that monolayer MoS2 doped with Mn should behave as a two-dimensional dilute magnetic semiconductor, which would open up possibilities for spintronic applications, device physics, and novel ground states. The…
The impurity is inherently manifest in cuprate superconductors, as cation substitution or intercalation is necessary for the introduction of charge carriers, and its influence on the electronic state is at the heart of a great debate in…
The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…
Quantum magnetism describes the properties of many materials such as transition metal oxides and cuprate superconductors. One of its elementary processes is the propagation of spin excitations. Here we study the quantum dynamics of a…
We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…
The realization of the spin-Hall effect in quantum wells has led to a plethora of studies regarding the properties of the edge states of a 2D topological insulator. These edge states constitute a class of one-dimensional liquids, called the…
An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The…
The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and…