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Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new…
The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO$_{3}$ (BFO) and superconducting YBa$_{2}$Cu$_{3}$O$_{7}$ (YBCO) grown on a (001) SrTiO$_{3}$ substrate is studied…
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gate leakage and reduced ON/OFF ratio are unsuitable for the…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Spinel-type LiNi0.5Mn1.5O4 (LNMO) is one of the most promising 5 V-class cathode materials for Li-ion batteries that can achieve high energy density and low production costs. However, in liquid electrolyte cells, the high voltage causes…
Starting from the purely microscopic model, we go beyond conventional mean-field theory and develop a self-consistent microscopic thermodynamic framework for disordered 2D superconductors. It incorporates the fermionic Bogoliubov…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
Recent developments in the domain of electronic materials and devices have attracted the interest of researchers toward flexible and printable electronic components like organic transistors, printable electrodes and sensors. Zinc Oxide…
Thermoelectric materials with a high figure of merit (ZT) are highly demanded for a sustainable solution to the energy crisis. In this study, we have predicted three new double perovskite oxides (DPOs), Ba2GaXO6 (X = V, Nb, Ta), with high…
Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip…
In this work we elaborated and characterized nanocomposite thin films using a preselected multiferroic matrix Bi$_{0.9}$Gd$_{0.1}$Fe$_{0.9}$Mn$_{0.1}$O$_3$ (BGFMO) in the aim to enhance their basic ferroelectric and magnetic properties. The…
A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer…
EuTiO3 (ETO) is a well-known complex oxide mainly investigated for its magnetic properties and its incipient ferro-electricity. In this work, we demonstrate the realization of suspended micro-mechanical structures, such as cantilevers and…
We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy…
Indium tin oxide (ITO) film, which is the most commonly used transparent conductive film (TCF), has traditionally been believed to be transparent in the visible spectrum but to reflect infrared (IR) light beyond the plasma wavelength…
Vanadium (IV) oxide is one of the most promising materials for thermochromic films due to its unique, reversible crystal phase transition from monoclinic (M1) to rutile (R) at its critical temperature (T$_c$) which corresponds to a change…
We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
Emerging communications and computing technologies will rely ever-more on expanding the useful radio frequency (RF) spectrum into the sub-THz and THz frequency range. Both classical and quantum applications would benefit from advancing…
High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the detailed electrical properties such as leakage current, CV…