Related papers: Evaluating charge noise acting on semiconductor qu…
Matter-wave interferometers with micro-particles will enable the next generation of quantum sensors to probe minute quantum phase information. Therefore, estimating the loss of coherence and the degree of entanglement degradation for such…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
We have studied the impact of low-frequency magnetic flux noise upon superconducting transmon qubits with various levels of tunability. We find that qubits with weaker tunability exhibit dephasing that is less sensitive to flux noise. This…
We study the electrical transport properties of a quantum point contact between a lead and a Hight Tc superconductor. For this, we use the Hamiltonian approach and non-equilibrium Green functions of the system. The electrical current and…
Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete…
The effects of a collection of classical two-level charge fluctuators on the coherence of a dynamically-decoupled qubit are studied. Distinct dynamics are found at different qubit working positions. Exact analytical formulae are derived at…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
We investigate the finite frequency noise of a quantum point contact at filling factor {\nu} = 5/2 using a weakly coupled resonant LC circuit as a detector. We show how one could spectroscopically address the fractional charged excitations…
Noise in entangled quantum systems is difficult to characterize due to many-body effects involving multiple degrees of freedom. This noise poses a challenge to quantum computing, where two-qubit gate performance is critical. Here, we…
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM).…
Frequency instability of superconducting resonators and qubits leads to dephasing and time-varying energy-loss and hinders quantum-processor tune-up. Its main source is dielectric noise originating in surface oxides. Thorough noise studies…
We present studies of quantum interference in a noise power spectrum in the system of two quantum dots (2QD) in a T-geometry. Performing the spectral decomposition we are able to separate local currents and distinguish between the intra-…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…
We present a systematic study of the phase-coherent dynamics of a superconducting three-Josephson-junction flux qubit. The qubit state is detected with the integrated-pulse method, which is a variant of the pulsed switching DC SQUID method.…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…