Related papers: Quantum strain sensor with a topological insulator…
The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulators with protected gapless surface states at any surface. By employing a six-band k.p model, we determine the spin…
Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…
We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…
Since the prediction of a new topological state of matter in graphene, materials acting as topological insulators have attracted wide attention. Shortly after the theoretical proposal for a mercury telluride (HgTe)-based two-dimensional…
Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been…
We consider surface states in semiconductors with inverted-band structures, such as $\alpha$-Sn and HgTe. The main interest is the interplay of the effect of a strain of an arbitrary sign and that of the sample finite size. We consider, in…
We propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe quantum wells (QWs) describing the side maxima of the first valence subband. By using the Hamiltonian, we explore the picture of helical edge states in tensile and…
Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band…
Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…
In this work, we propose a novel qubit-based sensor with the ability to characterize topological edge states in low-dimensional systems. A composite system is studied, consisting of a qubit coupled to a topologically nontrivial…
We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements…
Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110]…
This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a…
The manipulation of the helical edge states of two-dimensional topological insulators is crucial for the development of technological applications. Recently, an important step forward, namely, the experimental realization of a quantum point…
Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…