Related papers: Spin-polarized currents generated by magnetic Fe a…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
Polarized Raman-scattering spectra of non-superconducting, single-crystalline FeTe are investigated as function of temperature. We have found a relation between the magnitude of ordered magnetic moments and the linewidth of A1g phonons at…
Altermagnets have recently emerged as a new platform for spintronics applications, offering spin-split electronic bands despite vanishing net magnetization. Here, we investigate spin-current generation in Dirac altermagnets and identify…
We investigated spin-resolved electronic transport through a junction composed of a nonmagnetic metal electrode and a zigzag carbon nanotube by means of self-consistent Green's function method in the tight binding approximation and the…
The influence of a spin-polarized current on long ferromagnetic nanostripes is studied numerically. The current flows perpendicularly to the stripe. The study is based on the Landau-Lifshitz phenomenological equation with the…
An electric current flowing in a ferromagnetic metal carries spin angular momentum, i.e. it is spin-polarized. Here, we measure the spin-wave Doppler shift induced by the transfer of angular momentum from the diffusive spin-polarized…
Te is a naturally p-doped semiconductor with a chiral structure, where an electrical current causes the conduction electrons to become spin polarized parallel to the transport direction. In this paper, we present a comprehensive theoretical…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show…
We show that a quantum wire device with spin splitting can work as an active spin polarizer. Hot electrons in one `spin' subband (e.g. `spin-up') may pass such a device with weak electron pair scattering, while electrons in the opposite…
Using first principles density functional calculations, gold monatomic wires are found to exhibit a zigzag shape which remains under tension, becoming linear just before breaking. At room temperature they are found to spin, what explains…
Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag edged triangular antidots perform essential…
Atomically thin two-dimensional layer of honeycomb crystalline carbon known as graphene is a promising system for electronics. It has a point-like Fermi surface, which is very sensitive to external potentials. In particular, Zeeman magnetic…
The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…
An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin…
We demonstrate that spin chains are experimentally feasible using electrons confined in micro-Penning traps, supplemented with local magnetic field gradients. The resulting Heisenberg-like system is characterized by coupling strengths…
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…
Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In…
The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to…