Related papers: Microscopic model for intersubband gain from elect…
It is thought that nature already exploits quantum mechanical properties to increase the efficiency of solar energy harvesting devices. So, the operation of these devices can be enhanced by clever design of a nanoscopic, quantum mechanical…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
The homogeneous electron gas is a cornerstone of quantum condensed matter physics, providing the foundation for developing density functional theory and understanding electronic phases in semiconductors. However, theoretical understanding…
Considering the increasing number of experimental results in the manufacturing process of quantum dots with different geometries, and the fact that most numerical methods that can be used to investigate quantum dots with non-trivial…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…
We study adiabatic quantum pumping in the resonant tunneling regime of a nearly-closed quantum dot, which is coupled to two leads via tunneling barriers. Using small cyclic variations of the tunneling rates of the barriers as the pumping…
We study two-dimensional (2D) droplets of noninteracting electrons in a strong magnetic field, placed in a confining potential with arbitrary shape. Using semiclassical methods adapted to the lowest Landau level, we obtain near-Gaussian…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
We derive and test a generalization of Steady-State Ab Initio Laser Theory (SALT) to treat complex gain media. The generalized theory (C-SALT) is able to treat atomic and molecular gain media with diffusion and multiple lasing transitions,…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
We investigate experimentally the influence of current flow through two independent quantum point contacts to a nearby double quantum dot realized in a GaAs-AlGaAs heterostructure. The observed current through the double quantum dot can be…
A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
The use of ultra-low temperature cooling and of high hydrostatic pressure techniques has significantly expanded our understanding of the two-dimensional electron gas confined to GaAs/AlGaAs structures. This chapter reviews a selected set of…