Related papers: Valley-antisymmetric potential in graphene under d…
We report on an experimental study of spin and valley blockade in two-electron bilayer graphene (BLG) double quantum dots (DQDs) and explore the limits set by asymmetric orbitals and electronelectron interactions. The results obtained from…
A valley plasmonic crystal for graphene surface plasmons (GSPs) is proposed. We demonstrate that a designer metagate, placed within a few nanometers from graphene, can be used to impose a triangular periodic Fermi energy landscape on the…
The electronic implications of strain in graphene can be captured at low energies by means of pseudovector potentials which can give rise to pseudomagnetic fields. These strain-induced vector potentials arise from the local perturbation to…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
We recently shown, using tight-binding calculations, that nonequilibrium valley polarization can be realized in graphene, when the current is injected through "valley filter": a ballistic point contact with zigzag edges. Here we…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
Two opposite chiralities of Dirac electrons in a 2D graphene sheet modify the Friedel oscillations strongly: electrostatic potential around an impurity in graphene decays much faster than in 2D electron gas. At distances $r$ much larger…
We use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon…
A potential step in a graphene nanoribbon with zigzag edges is shown to be an intrinsic source of intervalley scattering -- no matter how smooth the step is on the scale of the lattice constant a. The valleys are coupled by a pair of…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix,…
The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is…
The electronic properties of the novel two dimensional (2D) material silicene are strongly influenced by the application of a perpendicular electric field $E_z$ and of an exchange field $M$ due to adatoms positioned on the surface or a…
We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…
We argue that by inducing superconductivity in graphene via the proximity effect, it is possible to observes the "quantum valley Hall effect". In the presence of magnetic field, supercurrent causes "valley pseudospin" to accumulate at the…
We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on…
When applying an oscillatory electric potential to an electrolyte solution, it is commonly assumed that the choice of which electrode is grounded or powered does not matter because the time-average of the electric potential is zero. Recent…