Related papers: Photoconductivity and photo-detection response of …
We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 $\mu$m…
Films of (FA$_{0.79}$MA$_{0.16}$Cs$_{0.05}$)$_{0.97}$Pb(I$_{0.84}$Br$_{0.16}$)$_{2.97}$ were grown over TiO$_{2}$, SnO$_{2}$, ITO, and NiO. Film conductivity was interrogated by measuring the in-phase and out-of-phase forces acting between…
Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time…
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance…
The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a…
We report structural and electronic characterization of the charge order phase in Bi0.4Ca0.6MnO3 films, in which photoinduced resistivity changes have been observed at temperatures approaching room temperature. In all films, lattice…
Photoelectronic properties of Alq3 were studied by photoconductivity measurements in thin film, sandwich (ITO/Alq3/LiF/Al) devices. We find that the photocurrent is dominated by bulk generation of carriers for incident photon energies…
The dynamics of the charge ordered (CO) state under non-equilibrium conditions created by strong dc-electric field (~106 V/cm) and photo-illumination with short (~ 6 ns) laser pulses is investigated in Bi1-xCaxMnO3 (x > 0.5) epitaxial…
In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197…
Dielectric response and conduction mechanism were investigated for a multiferroic BiFe$_{0.95}$Mn$_{0.05}$O$_3$ epitaxial thin film. A contribution from a thermally activated interface (0.37 eV) and the bulk of the film on the dielectric…
We report the first determination of the in-plane complex optical conductivity of 1111 high-Tc superconducting iron oxypnictide single crystals PrFeAsO0.6F0.35 and thin films SmFeAsO1-xFx by means of bulk-sensitive conventional and…
Revived attention in black phosphorus (bP) has been tremendous in the past decade. While many photoinitiated experiments have been conducted, a cross-examination of bP's photocarrier and structural dynamics is still lacking. In this report,…
In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By…
Multiferroic bismuth ferrite Bi_2Fe_4O_9 (BFO) ceramic was synthesized by conventional solid state reaction route. X-ray diffraction and Rietveld refinement show formation of single phase ceramic with orthorhombic crystal structure (space…
Single phase (001)-oriented BiFeO3 (BFO) thin films grown by pulsed laser deposition can only be obtained in a narrow window of deposition pressure and temperature and have a low magnetic moment. Out of the stability window Fe- or Bi-rich…
Ultra-thin two-dimensional (2D) materials have gained significant attention for making next-generation optoelectronic devices. Here, we report a large-area heterojunction photodetector fabricated using a liquid metal-printed 2D…
The pressure dependence of light-induced effects in single-crystalline BiFeO$_3$ is studied by optical spectroscopy. At low pressures, we observe three light-induced absorption features with energies just below the two crystal field…
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100…
Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications.…
Using spectroscopic ellipsometry, the refractive index and absorption versus wavelength of the ferroelectric antiferromagnet Bismuth Ferrite, BiFeO_3 is reported. The material has a direct band-gap at 442 nm wavelength (2.81 eV). Using…