Related papers: Single-charge detection by an atomic precision tun…
Bipolar thermoelectricity in tunnel junctions between superconductors of different energy gap has been recently predicted and experimentally demonstrated. This effect showed thermovoltages up to $\pm150\;\mu$V at milliKelvin temperatures.…
We experimentally investigate a scheme for detecting single atoms magnetically trapped on an atom chip. The detector is based on the photoionization of atoms and the subsequent detection of the generated ions. We describe the…
A comprehensive study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled…
The promise of single Cooper pair quantum circuits based on tunnel junctions for metrology and quantum information applications is severely limited by the influence of "offset" charges - random, slowly drifting microscopic charges inherent…
Superconducting tunnel junctions are being developed for application as photon detectors in astronomy. We present the latest results on the development of very high quality, very low critical temperature junctions, fabricated out of pure Al…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…
An application of impedance measurement technique (IMT) for a detection of quantum tunneling in molecular structures is investigated. A charged particle which tunnels in a two-well potential is electrically coupled to a high-quality…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
We demonstrate fast and ultrasensitive charge detection with a cavity-embedded Cooper pair transistor (cCPT) via dispersive readout of its Josephson inductance. We report a minimum charge sensitivity of $14$ $\mu e/\sqrt{\mathrm{Hz}}$ with…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied…
The detection of weak forces is a central problem in physics and engineering, ranging in importance from fundamental pursuits such as precision tests of gravity, gravitational-wave detection, and searches for dark matter, to applications…
We experimentally demonstrate the real-time detection and control of correlated charge tunneling in a dynamically driven quantum dot. Specifically, we measure the joint distribution of waiting times between tunneling charges and show that…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
Track detectors in high energy physics experiments require an accurate determination of a large number of alignment parameters. A general method has been developed, which allows the determination of up to several thousand alignment…
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which…