Related papers: Superconducting tantalum nitride-based normal meta…
Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sustained to high magnetic fields. Here we demonstrate…
The recent report of signs of room-temperature superconductivity in ultrathin single-walled carbon nanotubes (CNT) of types (2,1) and (3,0) holds significant promise for energy applications due to their ability to conduct current without…
In this research, it is shown that there are the necessary physical conditions to originate the returning superconductivity in the thin interface layer at the contact between the normal metal and the high temperature superconductor (N-S…
Nodal-line semimetals are topologically non-trivial states of matter featuring band crossings along a closed curve, i.e. nodal-line, in momentum space. Through a detailed analysis of the electronic structure, we show for the first time that…
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and…
We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method.…
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic…
Superconducting tunnel junctions are being developed for application as photon detectors in astronomy. We present the latest results on the development of very high quality, very low critical temperature junctions, fabricated out of pure Al…
A generalized model for the critical temperature Tc of superconducting bilayers is presented, which is valid with no restrictions to film thicknesses, Tc of the layers and interface resistivity. The model is verified experimentally on a…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
We report on the preparation and the physical properties of superconducting (TaNb)_1-x(ZrHfTi)_x high-entropy alloy films. The films were prepared by means of magnetron sputtering at room temperature, with x ranging from 0 to 1 with an…
We fabricate superconducting ion traps with niobium and niobium nitride and trap single 88Sr ions at cryogenic temperatures. The superconducting transition is verified and characterized by measuring the resistance and critical current using…
Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This is a novel member of the metal nitride superconductors family. The critical temperature of the superconducting transition varies depending on the…
The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…
In a superconductor electrons form pairs and electric transport becomes dissipation-less at low temperatures. Recently discovered iron based superconductors have the highest superconducting transition temperature next to copper oxides. In…
We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached…
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…
The temperature dependent frequency shifts of the Raman active G-band have recently been measured by R.Walter et al. for single-walled carbon nanotubes containing different concentrations of the magnetic impurity Ni:Co. These Raman data can…
We suggest and demonstrate in experiment that two normal metal /insulator/ superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is…