Related papers: Spin filtering in a magnetic barrier structure: in…
We use a fully relativistic layer Green's functions approach to investigate spin-dependent tunneling through a symmetric indirect band gap barrier like GaAs/AlAs/GaAs heterostructure along [100] direction. The method is based on Linear…
We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
The spin transfer torque in all-metal dual spin valve, in which two antiparallelly aligned pinned ferromagnetic layers are on the two sides of a free ferromagnetic layer with two thin nonmagnetic spacers in between, is studied in the…
We consider the radial transport of test particles due to the ExB drift motion in the guiding center approximation. Using an explicit expression to modify the electrostatic potential, we show that it is possible to construct a transport…
We review various aspects of magnetoresistance in (quasi-)twodimensional systems subject to an in-plane magnetic field. Concentrating on single-particle effects, three mechanisms leading to magnetoresistance are discussed: the orbital…
Spin transport phenomena in solid materials suffer limitations from spin relaxation associated to disorder or lack of translational invariance. Ultracold atoms, free of that disorder, can provide a platform to observe phenomena beyond the…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
Electron transport in a finite one dimensional quantum spin chain (with ferromagnetic exchange) is studied within an $s-d$ exchange Hamiltonian. Spin transfer coefficients strongly depend on the sign of the $s-d$ exchange constant. For a…
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ N\'{e}el domain wall in a…
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence.…
We consider a single electron traveling along a strictly one-dimensional quantum wire interacting with another electron in a quantum ring capacitively coupled to the wire. We develop an exact numerical method for treating the scattering…
The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B…
It is shown that the interplay of long-range disorder and in-plane magnetic field gives rise to an out-of-plane spin polarization and a finite spin Hall conductivity of the two-dimensional electron gas in the presence of Rashba spin-orbit…
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic electronic-structure calculations. In particular we investigate the role of defects in the contact region in order to explain…