Related papers: Localized in-gap state in a single electron doped …
Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to…
Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…
Recent experiments on inelastic light scattering in a number of insulating cuprates [1] revealed a new excitation appearing in the case of crossed polarizations just below the optical absorption threshold. This observation suggests that…
We study the conditions to realize an excitonic condensed phase in an electron-hole bilayer system with local Hubbard-like interactions at half-filling, where we can address the interplay with Mott localization. Using Dynamical Mean-Field…
It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because…
Motivated by recent experiments on toroidal Bose-Einstein condensates in all-optical traps with tunable weak links, we study the one-dimensional Bose-Hubbard model on a ring-shaped lattice with a small region of weak hopping integrals using…
We study the electronic spectral properties at zero temperature of the one-dimensional (1D) version of the degenerate two-orbital Kanamori Hubbard model (KHM), one of the well established frameworks to study transition metal compounds,…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…
Inspired by recent advances in the fabrication of surface superlattices, and in particular the triangular lattice made of tin (Sn) atoms on silicon, we study an extended Hubbard mode on a triangular lattice. The observations of magnetism in…
Within the framework of a mean-field approach the Mott-Hubbard phase transition is considered in the Hubbard and Falicov-Kimball models for half-filled occupation. It is shown that a static Z_2-field forms an insulator state on the lattice…
We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a…
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…
Photodoped states are widely observed in laser-excited Mott insulators, in which charge excitations are quickly created and can exist beyond the duration of the external driving. Despite the fruitful experimental explorations, theoretical…
We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing…
In a system where selective Mott localization is realized, some electrons show a gap to charge excitations while others do not. A hybridization between these two kind of electrons will lead to a smoothening of this sharp difference and can…
The free energy bounds for inhomogeneous current states in doped antiferromagnetic insulators and spatial configurations of spin and charge degrees of freedom in lightly and heavily underdoped phases of this strongly correlated electron…
The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential mu abruptly jumps by ~ 0.07 eV…
Understanding the physics of doping a charge transfer insulator is the most important problem in high-temperature superconductivity. In this work, we show that an in-gap bound state emerges from the localized hole of the doped charge…
New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy…