Related papers: Energy-efficient magnetoelastic non-volatile memor…
As the performance gap between memory and processors has increased, then it leads to the poor performance. Efficient virtual memory can overcome this problem. And the efficiency of virtual memory depends on the replacement policy used for…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
The impressive performance of artificial neural networks has come at the cost of high energy usage and CO$_2$ emissions. Unconventional computing architectures, with magnetic systems as a candidate, have potential as alternative…
Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however,…
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have…
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by…
Nowadays a bit is no longer a mere abstraction but a physical quantity whose manipulation governs both operation of modern technologies and theoretical frontiers of fundamental science. In this work we propose a setup in which the memory…
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Conventional racetrack memories move information by pushing magnetic domain walls or other spin textures with spin-polarized currents, but the accompanying Joule heating inflates their energy budget and can hamper scaling. Here we present a…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…
Energy costs of information processing are growing exponentially. Bit erasure is a key problem in this energy-information nexus, and a number of seminal relationships have been deduced regarding the relationship between thermodynamic costs…
The primary impediment to continued improvement of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the devices during switching of bits. One very promising…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
Non-Volatile Main Memories (NVMMs) have recently emerged as promising technologies for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy…
The design of the buffer manager in database management systems (DBMSs) is influenced by the performance characteristics of volatile memory (DRAM) and non-volatile storage (e.g., SSD). The key design assumptions have been that the data must…
Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…