Related papers: Controlled epitaxial graphene growth within amorph…
First-principles surface phase diagrams reveal that epitaxial monolayer graphene films on the Si side of 3C-SiC(111) can exist as thermodynamically stable phases in a narrow range of experimentally controllable conditions, defining a path…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force…
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…
Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…
A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…
Amorphous carbon films have been routinely used to enhance the preparation of frozen-hydrated transmission electron microscopy (TEM) samples, either in retaining protein concentration, providing mechanical stability or dissipating sample…
Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the…
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…
Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, its zero band gap challenges the control of current flow through electrical gating,…
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron…
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining…
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of…
There are several growing methods for graphene. In this study, the growth of graphene-like clusters on the SiC wafers is done by annealing the wafers in a vacuum evaporation system equipped with a heating source accessory. For evaluating…
Intercalation is a robust approach for modulating the properties of epitaxial graphene on SiC and stabilizing two-dimensional (2D) intercalant layers at the graphene/SiC interface. In this work, we present synchrotron-based angle resolved…
High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously…