Related papers: Temperature-dependent scanning tunneling spectrosc…
We investigate quasi one-dimensional atomic chains on Si(553)-Au with a scanning tunneling microscope (STM). The observed periodicity at the Si step edge can be altered by the STM and depends on the magnitude of the tunneling current. In a…
We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are…
We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability…
The collective electronic excitations of arrays of Au chains on regularly stepped Si(553) and Si(775) surfaces were studied using electron loss spectroscopy with simultaneous high energy and momentum resolution (ELS-LEED) in combination…
Scanning tunneling microscopy (STM) at 5 K was used to study individual Au atoms adsorbed on the surface of a WSe2 layer grown on epitaxial graphene. In line with theoretical predictions, scanning tunneling spectroscopy measurements reveal…
Atoms transferred to W(111) and W(110) tip apices from the Au(111) surface during tunneling and approach to mechanical contact experiments in STM are characterized in FIM at room temperature and at 158 K. The different activation energies…
Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to…
The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…
Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of…
We present tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM[Y. Zhang et al., Nat. Phys. 4,…
We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the…
We performed the local spectroscopy of a Normal-metal--Superconductor (N-S) junction with the help of a very low temperature (60 mK) Scanning Tunneling Microscope (STM). The spatial dependence of the local density of states was probed…
We investigated the local electronic density of states in superconductor-normal metal (Nb-Au) bilayers using a very low temperature (60 mK) STM. High resolution tunneling spectra measured on the normal metal (Au) surface show a clear…
Tunneling spectroscopy played a central role in the experimental verification of the microscopic theory of superconductivity in the classical superconductors. Initial attempts to apply the same approach to high-temperature superconductors…
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias…
Based on a Fermi liquid picture, the temperature effect on the impurity-induced spatial modulation of local density of states (LDOS) is investigated for the d-wave superconductor Bi$_2$Sr$_2$CaCu$_2$O$_8$, in the context of scanning…
The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…
The atomic structure of well-ordered single steps on the Si(111)-\sqrt{3}\times\sqrt{3}-Sn surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed using low-temperature scanning tunneling…
The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a…
The electronic structure of Si(111)-(6x6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb$_{(111)}$ and with the diameter of…