Related papers: Domain Wall Roughness in Stripe Phase BiFeO$_3$ Th…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
We show that domain walls separating coexisting extremal current phases in driven diffusive systems exhibit complex stochastic dynamics, with a subdiffusive temporal growth of position fluctuations due to long-range anticorrelated current…
Considerable work has focused on the use of epitaxial strain to engineer domain structures in ferroic materials. Here, we revisit the observed reduction of domain variants in rhombohedral BiFeO3 films on rare-earth scandate substrates.…
We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the…
We report on the crystal structure and ferroelectric properties of epitaxial ZrO$_2$ films ranging from 7 to 42 nm thickness grown on La$_{0.67}$Sr$_{0.33}$MnO$_3$-buffered (110)-oriented SrTiO$_3$ substrate. By employing X-ray diffraction,…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
The geometry and morphology of magnetic domain walls (DWs) are closely related to their dynamics when driven by external forces. Under some reliable approximations DWs can be considered self-affine interfaces, so universal laws govern their…
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization…
Freestanding ferroelectric oxide membranes emerge as a promising platform for exploring the interplay between topological polar ordering and dipolar interactions that are continuously tunable by strain. Our investigations combining density…
Micro-Raman spectroscopy has been used to study lattice dynamics associated with the ferroelectric domains of a BiFeO$_3$ single crystal at low temperature. The phonon assignment shows a large frequency splitting between the transverse and…
Dielectric response and conduction mechanism were investigated for a multiferroic BiFe$_{0.95}$Mn$_{0.05}$O$_3$ epitaxial thin film. A contribution from a thermally activated interface (0.37 eV) and the bulk of the film on the dielectric…
Motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain wall motion through the ferroelectric material is however hindered by pinning on…
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually…
Using spin-polarized low-energy electron microscopy to study magnetization in epitaxial layered systems, we found that the area vs perimeter relationship of magnetic domains in the top Fe layers of Fe/NiO/Fe(100) structures follows a…
Aurivillius ferroelectric $Bi_2WO_6$ (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic conductivity. Despite these promising characteristics, an…
After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic…
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…
The magnetic microstructure and domain wall distribution of antiferromagnetic $\alpha$-Fe$_2$O$_3$ epitaxial layers is determined by statistical image analyses. Using dichroic spectro-microscopy images, we demonstrate that the domain…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…