Related papers: Giant magnetoresistance for ensembles of ferromagn…
We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
We develop a hydrodynamic description of electron magnetotransport in conductors without Galilean invariance in the presence of a weak long-range disorder potential. We show that magnetoresistance becomes strong (of order 100 %) at…
Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…
The relevance of pair-breaking by exchange and dipolar fields, and by injected spins in a low carrier density cuprate Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_7$ sandwiched between two ferromagnetic La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ layers is…
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…
We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann…
Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity…
We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of…
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found…
The magnetoimpedance effect is a versatile tool to investigate ferromagnetic materials, revealing aspects on the fundamental physics associated to magnetization dynamics, broadband magnetic properties, important issues for current and…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
It is shown, that the monotonic part of interlayer electronic conductivity strongly decreases in high magnetic field perpendicular to the conducting layers. We consider only the coherent interlayer tunnelling, and the obtained result…
Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in…
Transport properties of manganese oxides suggest that their colossal magnetoresistance (CMR) is due to percolation between ferromagnetic metallic (FM) clusters in an antiferromagnetic insulating (AFI) matrix. We have studied small-angle…