Related papers: Surface potential at a ferroelectric grain due to …
We study ferroelectricity in thin films of pseudo-proper ferroelectrics such as the so-called spiral multiferroics. We find that this type of ferroelectricity stands better against depolarizing fields than conventional one. Its…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
In this work we examine the electrostatic screening potential due to a point charge located off-centre in a spherical dielectric cavity. This potential is expanded for the case in which the dielectric constant $\epsilon$ is large, several…
Originating from a broken spatial inversion symmetry, ferroelectricity is a functionality of materials with an electric dipole that can be switched by external electric fields. Spontaneous polarization is a crucial ferroelectric property,…
The contrast mechanism for the visualization of ferroelectric domain boundaries with lateral force microscopy is generally assumed to be caused by mechanical deformation of the sample due to the converse piezoelectric effect. We show,…
Phase-field simulations of domain walls between antiparallel ferroelectric domains in BaTiO3 - SrTiO3 crystalline superlattices suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act…
In the presence of an external vertical electric field and strain, it is evident that 1T${^\prime}$-MoS$_2$ exhibits tilted Dirac bands which are valley-spin-polarized. Additionally, this material experiences a topological phase change…
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly…
Ferroelectric materials such as BaTiO3 exhibit spontaneous polarization that can be reoriented by an external electric field, forming the basis of various memory, actuator, and sensor applications. The polarization switching behavior,…
The near fields originated from a small quasi-two-dimensional ferrite disk with magnetic-dipolar-mode (MDM) oscillations are the fields with broken dual (electric-magnetic) symmetry. Numerical studies show that such fields, called the…
Two-dimensional (2D) electronic materials are of significant technological interest due to their exceptional properties and broad applicability in engineering. The transition from nanoscale physics, that dictates their stable…
We review the concept of surface charge, first in the context of the polarization in ferroelectric materials, and second in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the…
By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and…
In present work we calculated the three components of polarization in phenomenological theory framework by consideration of three Euler-Lagrange equations, which include mismatch effect and influence of misfit dislocations, surface tension…
We investigate theoretically the interplay between the effects of a perpendicular electric field and incommensurability at the interface on the electronic properties of a heterostructure of bilayer graphene and a semiconducting substrate…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
We study the ferroelectric stability and surface structural properties of an oxygen-terminated hexagonal YMnO$_3$ ultra-thin film using density functional theory. Under an open circuit boundary condition, the ferroelectric state with the…
Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…
Polycrystalline hafnia-based thin films exhibit mixed ferroelectric (FE), antiferroelectric (AFE), and dielectric (DE) behavior, with switching characteristics strongly influenced by microstructure and phase distribution. Here, we develop a…
We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO3, we demonstrate that ferroelectric…