Related papers: Thermal Diffusion Doping of Single Crystal Diamond
We report a combined theoretical and experimental search for thermoelectric materials based on semiconducting zinc antimony. Influence of three new doping elements (sodium, potassium and boron) on the electronic properties is investigated…
We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp)…
Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power…
Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel…
We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature…
Within the framework of kinetic-energy-driven superconductivity, the asymmetric doping dependence of superconductivity between the hole- and electron-doped triangular-lattice superconductors has been studied. It is shown that although the…
Previous investigations of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ mainly focused on the direct competition between superconductivity and charge density wave (CDW). However, the superconductivity itself, although has been prominently enhanced by…
It is essential to explore two-dimensional (2D) material with magnetic ordering in new generation spintronic devices. Particularly, the seeking of room-temperature 2D ferromagnetic (FM) materials is a hot topic of current research. Here, we…
The weak-coupling quantum phase diagrams of the one-dimensional (1D) Holstein-Hubbard and Peierls-Hubbard models are computed near half-filling, using a multi-step renormalization group technique. If strong enough, the electron-phonon…
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in…
The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark…
Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature…
Cold atom electron sources are a promising alternative to traditional photocathode sources for use in ultrafast electron diffraction due to greatly reduced electron temperature at creation, and the potential for a corresponding increase in…
Single-crystalline diamond (SCD) films possess exceptional thermal, chemical, and optical properties, making them ideal for advanced applications. However, achieving uniform film quality via microwave plasma chemical vapor deposition…
Integrated photonic circuits have transformed data communication, biosensing, and light detection and ranging, and hold wide-ranging potential for optical computing, optical imaging and signal processing. These applications often require…
Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single…
The doping and temperature dependence of the thermodynamic properties in cuprate superconductors is studied based on the kinetic energy driven superconducting mechanism. By considering the interplay between the superconducting gap and…
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an…
A theoretical model is presented to reveal the mechanism of B doping into graphene in the microwave plasma experiment choosing trimethylboron as the doping source (ACS NANO 6 (2012) 1970). The results show that the reason for B doping comes…
We present an {\it ab initio} study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in…