Related papers: Impact of graphene polycrystallinity on the perfor…
Recently, the strain engineering of two-dimensional materials such as graphene has attracted considerable attention for its great potential in functional nanodevices. Here, we theoretically and experimentally investigate the strain…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
In this work we investigated correlations between the internal microstructure and sample size (lateral as well as thickness) of mesoscopic, tens of nanometer thick graphite (multigraphene) samples and the temperature $(T)$ and field $(B)$…
Many technologically useful materials are polycrystals composed of a myriad of small monocrystalline grains separated by grain boundaries. Dynamics of grain boundaries play a crucial role in determining the grain structure and defining the…
We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of the strain modulus and direction,…
In this study, we address damage initiation and micro-crack formation in ductile failure of polycrystalline metals. We show how our recently published thermodynamic framework for ductile phase-field fracture of single crystals can be…
The analytic expressions for the maximum and minimum reflectance of optical films coated with gapped graphene are derived in the application region of the Dirac model with account of multiple reflections. The respective film thicknesses are…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with…
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…
Grain boundaries are topological defects that often have a disordered character. Disorder implies that understanding general trends is more important than accurate investigations of individual grain boundaries. Here we present trends in the…
Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…
Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene,…
External magnetic fields influence the microstructure of polycrystalline materials. We explore the influence of strong external magnetic fields on the long time scaling of grain size during coarsening in thin films with an extended…
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a…
This manuscript deals with time flow in ballistic graphene devices. It is commonly believed that in the ballistic regime the traversal time of carriers in gated graphene at normal incidence is just the ratio of the length of the device and…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements,…
Recently, huge attention has been drawn to improve optical sensing devices based on photonic resonators in the presence of graphene. In this paper, based on the transfer matrix approach and TE polarization for the incident electromagnetic…