Related papers: Three-axis Hall transducer based on semiconductor …
We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs…
Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $\rho$, Hall coefficient $R_{H}$,…
In this paper, we report first principles calculations based on density functional theory to reveal the effects of selected adatoms (Li, Na, K, Be, Mg, Ca, B, C, N, O, Al, Si, P, Ga, Ge, As, Se and S) adsorption on GaX ( where X=S, Se)…
We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the…
A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74…
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition…
Electronic devices made from two-dimensional materials (2DMs) significantly outperform their silicon counterparts; however, silicon CMOS technology remains commercially predominant as it offers the capability to operate dense arrays of…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in…
We demonstrate a strong correlation between the magnetoresistive and the concurrent microwave reflection from the microwave photo-excited GaAs/AlGaAs two-dimensional electron system (2DES). These correlations are followed as a function of…
Topological superconductors may undergo transitions between phases with different topological numbers which, like the case of topological insulators, are related to the presence of gapless (Majorana) edge states. In $\mathbb{Z}$ topological…
We report on electrical resistance measurements of an individual carbon nanotube down to a temperature T=20 mK. The conductance exhibits a ln T dependence and saturates at low temperature. A magnetic field applied perpendicular to the tube…
The nonlinear Hall effect (NLHE) has been detected in various of condensed matter systems. Unlike linear Hall effect, NLHE may exist in physical systems with broken inversion symmetry in the crystal. On the other hand, real space spin…
Voltages parallel and transverse to electric current in slightly inhomogeneous superconductors can contain components proportional to the field and temperature derivatives of the longitudinal and Hall resistivities. We show that these…
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an…
Metamaterials comprising assemblies of dielectric resonators have attracted much attention due to their low intrinsic loss and isotropic optical response. In particular, metasurfaces made from silicon dielectric resonators have shown…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…
We present conductance-matrix measurements of a three-terminal superconductor-semiconductor hybrid device consisting of two normal leads and one superconducting lead. Using a symmetry decomposition of the conductance, we find that the…
When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We…