Related papers: Disorder induced magnetoresistance in a two dimens…
The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse…
We develop the theoretical framework for calculating magnetic noise from conducting two-dimensional (2D) materials. We describe how local measurements of this noise can directly probe the wave-vector dependent transport properties of the…
Recent experiments suggest a new paradigm towards novel colossal magnetoresistance (CMR) in a family of materials EuM$_2$X$_2$(M=Cd, In, Zn; X=P, As), distinct from the traditional avenues involving Kondo-RKKY crossovers, magnetic phase…
We investigate the second spectrum of charge carrier density fluctuations in graphene within the McWorther model, where noise is induced by electron traps in the substrate. Within this simple picture, we obtain a closed-form expression…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
The localization properties of a two-dimensional disordered electron gas in a strong external magnetic field are studied. The impurities are considered to be located on a square lattice with random amplitudes. The concentration of these…
We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…
We calculate the temperature dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene.…
In conventional metals, electronic transport in a magnetic field is characterized by the motion of electrons along orbits on the Fermi surface, which usually causes an increase in the resistivity through averaging over velocities. Here we…
We study anisotropic magnetoresistance (AMR) in a spin-polarized two-dimensional electron gas with Rashba spin-orbit coupling and nonmagnetic disorder collision. We show that AMR exists, arising from the combined effect of in-plane…
Different instabilities have been speculated for a three-dimensional electron gas confined to its lowest Landau level. The phase transition induced in graphite by a strong magnetic field, and believed to be a Charge Density Wave (CDW), is…
We analyze the electronic properties of adatom doped graphene in the low impurity concentration regime. We focus on the Anderson localized regime and calculate the localization length ($\xi$) as a function of the electron doping and an…
When hexagonal boron nitride (hBN) and graphene are aligned at zero or small twist angle, a moir\'e structure is formed due to the small lattice constant mismatch between the two structures. In this work, we analyze magnetic ordering…
In order to gain insights into the origin of colossal magneto-resistance (CMR) in manganese oxides, we performed a ^{139}La NMR study in the double-layered compound La_{1.2}Sr_{1.8}Mn_2O_7. We find that above the Curie temperature T_C=126…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
We investigate the dependence of the electrical resistivity of $\sim 60 $nm thick single crystalline graphite samples on the defect concentration produced by proton irradiation at very low fluences. We show that the resistivity decreases…
An unsaturated linear magnetoresistance (LMR) has attracted widely attention because of potential applications and fundamental interest. By controlling growth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3…
We propose the phenomenological description of ferroelectric disordering in ferroelectric-semiconductors caused by charged impurities with the charge density random fluctuations. The material improper conductivity is proportional to the…
We report the observation of the antisymmetric magnetoresistance (MR) in perpendicular magnetized CoTb films with inhomogeneous magnetization distribution driven by gradient magnetic field. By synchronously charactering the domain pattern…