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Related papers: Spin injection via (110)-grown semiconductor barri…

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It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. L. Korenev

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. T. Filip , B. H. Hoving , F. J. Jedema , B. J. van Wees

We propose a spin cell based on photon-assisted tunneling through a conventional semiconductor barrier. The Dresselhaus spin-orbit interaction is included to break the spin rotation symmetry. Due to the in-plane electric field induced…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 B. H. Wu , Kang-Hun Ahn

We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…

Mesoscale and Nanoscale Physics · Physics 2009-02-26 Yurii Ya. Tkach , Vladimir A. Sablikov , Aleksei A. Sukhanov

Spin-dependent tunneling through an indirect bandgap barrier like the GaAs/AlAs/GaAs heterostructure along [001] direction is studied by the tight-binding method. The tunneling is characterized by the proportionality of the Dresselhaus…

Materials Science · Physics 2009-07-01 Titus Sandu , Athanasios Chantis , Radu Iftimie

A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Xianbo Xiao , Yuguang Chen

We study the spin polarization of mixed and entangled electron states in a four probe/beam splitter geometry with local Rashba and Dresselhaus interactions. A pair of maximally entangled electrons collides with the beam splitter and enters…

Quantum Physics · Physics 2012-12-04 Luis A. González-Árraga , Bertrand Berche , Ernesto Medina

Spin dependent transport in a multi-terminal mesoscopic ring is investigated in presence of Rashba and Dresselhaus spin-orbit interactions. Within a tight-binding framework we use a general spin density matrix formalism to evaluate all…

Mesoscale and Nanoscale Physics · Physics 2013-10-31 Moumita Dey , Santanu K. Maiti , Sreekantha Sil , S. N. Karmakar

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

Materials Science · Physics 2009-11-10 A. M. Bratkovsky , V. V. Osipov

We demonstrate that the flow of a longitudinal spin current with different spin polarization will induce different patterns of charge accumulation in a two-terminal strip, or electric current distribution in a four-terminal Hall-bar…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Jian Li , Shun-Qing Shen

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

Other Condensed Matter · Physics 2015-06-24 Igor Zutic , Jaroslav Fabian , Steven C. Erwin

We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. Khodas , A. Shekhter , A. M. Finkel'stein

We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 L. E. Golub , E. L. Ivchenko

We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. Marigliano Ramaglia , D. Bercioux , V. Cataudella , G. De Filippis , C. A. Perroni

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 A. G. Mal'shukov , K. A. Chao

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…

Condensed Matter · Physics 2009-11-07 J. D. Albrecht , D. L. Smith

We investigate the spin-dependent transport properties of two-dimensional electron gas (2DEG) systems formed in diluted magnetic semiconductors and in the presence of Rashba spin-orbit interaction in the framework of the scattering matrix…

Materials Science · Physics 2009-11-13 Anh T. Ngo , J. M. Villas-Boas , Sergio E. Ulloa

Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and…

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…

Materials Science · Physics 2007-05-23 A. M. Bratkovsky , V. V. Osipov