Related papers: Charge Pumping Through a Single Donor Atom
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson…
We report a method to derive the potential barrier profile shape in a dynamic quantum dot and show the loading statistics, and hence accuracy of electron transfer, depend significantly on the shape of the barrier. This method takes a…
We theoretically study the tunnelling current of a single electron transistor (SET) under optical pumping. It found that holes in the quantum dot(QD) created by optical pumping lead to new channels for the electrons tunnelling from emitter…
This work presents a simple power converter, without any high voltage transformer, able to supply and control a plasma jet based on dielectric barrier discharge. The converter, operating in pulsed current mode, requires a single power…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
In this Letter, we study the real-ime dynamics of single-electron pumpings. We modulate the left tunneling barrier along with the dot level but slightly changing the right barrier to operate the single-electron pumping device at zero bias.…
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…
We consider pumping through a small quantum dot separated from the leads by two point contacts, whose conductances, $G_{1}$ and $G_{2}$, serve as pumping parameters. When the dot is pincched, we find that there is a "resonance line" in the…
A mechanism of electron-mediated pumping of heat in the absence of net charge transfer is proposed. It may be realized in charge-neutral electron systems, such as graphene, coupled to an external electric potential. The flow of heat in this…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
A major difficulty in realizing a solid-state quantum computer is the reliable measurement of the states of the quantum registers. In this paper, we propose an efficient readout scheme making use of the resonant tunneling of a ballistic…
We study electron pumping through a system of barriers, whose heights are deformed adiabatically. We derive a simple formula for the pumped charge $Q$ in terms of the total reflection and transmission amplitudes and phases. The pumped…
Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus…
We utilize a time-periodic ratchet-like potential modulation imposed onto a two-dimensional electron system inside a GaAs/Al$_x$Ga$_{1-x}$As heterostructure to evoke a net dc pumping current. The modulation is induced by two sets of…
We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. are defined by the lowest two…
A capacitance standard based on the definition of capacitance C = Ne/U is realized when a capacitor is charged with a known number N of electrons (e is the elementary charge) and the voltage U across the capacitor is measured. If U is…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…