Related papers: Random Telegraph Signal in a Metallic Double-Dot S…
Radio-frequency induced spin transitions of one individual proton are observed for the first time. The spin quantum jumps are detected via the continuous Stern-Gerlach effect, which is used in an experiment with a single proton stored in a…
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum…
Current noise in electronic devices usually arises from uncorrelated charging events, with individual transitions resolved only at low temperatures. However, in 1-D nanotube-based transistors, we have observed random telegraph signal (RTS)…
Time-resolved resonance fluorescence (RF) is used to analyse electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD…
For several decades, ions have been trapped by radio frequency (RF) and neutral particles by optical fields. We implement the experimental proof-of-principle for trapping an ion in an optical dipole trap. While loading, initialization and…
We consider a scattering set-up with an entangler and beam splitter where the current noise exhibits bunching behavior for electronic singlet states and antibunching behavior for triplet states. We show that the entanglement of two…
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back…
Two-particle scattering probabilities in tunneling scenarios with exchange interaction are analyzed with quasi-particle wave packets. Two initial one-particle wave packets (with opposite central momentums) are spatially localized at each…
Scattering by slowly fluctuating degrees of freedom can cause a transient localization of the current-carrying electrons in metals, driving the system away from normal metallic behavior. We illustrate and characterize this general…
We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from…
Single-enzyme catalysis offers a promising approach for unravelling the dynamic behaviour of individual enzymes as they undergo a reaction, revealing the complex heterogeneity that is lost in the averaged ensembles. Here we demonstrate…
The hold time $\tau$ of a single-electron trap is shown to increase significantly due to suppression of environmentally assisted tunneling events. Using two rf-tight radiation shields instead of a single one, we demonstrate increase of…
The spectrum of spinless, non-interacting electrons on a linear chain that is buckled in a non- uniform manner giving it a flavor of a topologically disordered lattice, is investigated within a tight binding formalism. We have addressed two…
We obtain and analyze the effect of electron-electron Coulomb interaction on the time dependent current flowing through a mesoscopic system connected to biased semi-infinite leads. We assume the contact is gradually switched on in time and…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
In the presence of an active medium incorporated in a Penning trap, the moving electrons can become bunched, as they get enough energy, they escape the trap forming an optical injector. These bunched electrons can enter next PASER section…
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…
We are developing a single-ion optical clock based on a surface-electrode (SE) trap that we will operate with $^{171}$Yb$^+$ ions on the electric quadrupole transition at 435.5 nm. We present heating rate measurements performed with a…