Related papers: Tunable band gap in germanene by surface adsorptio…
It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…
The structural and electronic properties of germanene coated Ge$_2$Pt clusters have been determined by scanning tunneling microscopy and spectroscopy at room temperature. The interior of the germanene sheet exhibits a buckled honeycomb…
The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
The recent discovery of Dirac semimetals represents a new achievement in our fundamental understanding of topological states of matter. Due to their topological surface states, high mobility, and exotic properties associated with bulk Dirac…
Electronic and optical properties of materials are affected by atomic motion through the electron-phonon interaction: not only band gaps change with temperature, but even at absolute zero temperature, zero-point motion causes band-gap…
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…
The linear conductance spectrum of a metallic graphene junction formed by interconnecting two gapless graphene nanoribbons is calculated. A strong conductance suppression appears in the vicinity of the Dirac point. We found that such a…
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…
Germanene, the germanium analogue of graphene, shares many properties with its carbon counterpart. Both materials are two-dimensional materials that host Dirac fermions. There are, however, also a few important differences between these two…
Near-field radiative heat transfer (NFRHT) is strongly related with many applications such as near-field imaging, thermos-photovoltaics and thermal circuit devices. The active control of NFRHT is of great interest since it provides a degree…
Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be…
We study the band gap of finite $N_A=7$ armchair graphene nanoribbons (7-AGNRs) on Au(111) through scanning tunneling microscopy/spectroscopy combined with density functional theory calculations. The band gap of 7-AGNRs with lengths of 6 nm…
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…
In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…
The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is…
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…
Bandgaps in layered materials are critical for enabling functionalities such as tunable photodetection, efficient energy conversion, and nonlinear optical responses, which are essential for next-generation photonic and quantum devices. Gap…