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Related papers: Ferroelectricity at ferroelectric domain walls

200 papers

Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated temperatures. DWs show very different properties as compared…

In ferroelectricity, atomic-scale dipole moments interact collectively to produce strong electro-mechanical coupling and switchable macroscopic polarization. Hence, the functionality of ferroelectrics emerges at a solid-solid phase…

Materials Science · Physics 2019-08-21 Maya Barzilay , Hemaprabha Elangovan , Yachin Ivry

Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…

Materials Science · Physics 2025-10-06 Arne J. Klomp , Ruben Khachaturyan , Theophilus Wallis , Anna Grünebohm , Karsten Albe

Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains)…

Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of…

Materials Science · Physics 2019-05-22 Y. J. Wang , Y. L. Tang , Y. L. Zhu , Y. P. Feng , X. L. Ma

The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent…

Materials Science · Physics 2022-11-08 Urko Petralanda , Thomas Olsen

Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest…

Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…

Materials Science · Physics 2017-01-12 Meng Ye , David Vanderbilt

The recently discovered ferroelectricity of van der Waals bilayers offers an unconventional route to improve the performance of devices. Key parameters such as switching field and speed depend on the static and dynamic properties of domain…

Materials Science · Physics 2023-01-02 Ri He , Bingwen Zhang , Hua Wang , Lei Li , Tang Ping , Gerrit Bauer , Zhicheng Zhong

By using broadband linear and nonlinear dielectric spectroscopy we studied the magnetoelectric dynamics in the chiral antiferromagnet MnWO4. In the multiferroic phase the dielectric response is dominated by the dynamics of domains and…

Strongly Correlated Electrons · Physics 2014-04-25 D. Niermann , C. P. Grams , M. Schalenbach , P. Becker , L. Bohaty , J. Stein , M. Braden , J. Hemberger

The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching…

Materials Science · Physics 2023-08-02 Ri He , Hua Wang , Fucai Liu , Shi Liu , Houfang Liu , Zhicheng Zhong

Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…

We investigate the dynamics of ferroelectric textures driven by polarization currents. We show that, ferrons, the quanta of collective polarization excitations, provide an exotic driving mechanism for domain wall (DW) dynamics, compared…

Materials Science · Physics 2026-03-12 Huanhuan Yang , Peng Yan , Gerrit E. W. Bauer

Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…

Ferroelectric charged domain walls are known for their high electrical conductivity, making them promising candidates for applications in modern electronics. A remarkably high conductivity and nominal charge density has been found in the…

Materials Science · Physics 2026-05-14 Petr S. Bednyakov , Iegor Rafalovskyi , Jiri Hlinka

Nanostructured ferroelectrics display exotic multidomain configurations resulting from the electrostatic and elastic boundary conditions they are subject to. While the ferroelectric domains appear frozen in experimental images, atomistic…

Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…

Materials Science · Physics 2017-03-15 Shi Liu , R. E. Cohen

Prediction of properties from composition is a fundamental goal of materials science and can greatly accelerate development of functional materials. It is particularly relevant for ferroelectric perovskite solid solutions where…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

Materials Science · Physics 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…

Materials Science · Physics 2016-06-06 F. -T. Huang , F. Xue , B. Gao , L. H. Wang , X. Luo , W. Cai , X. Lu , J. M. Rondinelli , L. Q. Chen , S. -W. Cheong