Related papers: Which Memristor Theory is Best for Relating Device…
The width of the electrodes is not included in the current phenomenological models of memristance, but is included in the memory-conservation (mem-con) theory of memristance. An experimental study of the effect of changing the top electrode…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…
Memristor, memory resistor, is an emerging technology for computational memory. Number of different memristor models are available based on the physical experiments. To use memristor as a computational memory element, one should know how…
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly…
Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
This study investigates 7-methylquinolinium halobismuthates (I, Br, and Cl) in two aspects: (1) their structural and semiconducting properties influenced by anionic composition, and (2) their memristive and plasticity characteristics for…
This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…
This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action…
The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…