Related papers: Photo-induced persistent inversion of germanium in…
The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100…
The rapid rise of artificial intelligence, and in-memory computing has reinvigorated research on scalable, energy-efficient, and reconfigurable photonic hardware. Non-volatile phase-change materials (PCMs) are attractive, as they offer…
We report the first empirical efficiency measurement of germanium-based thermophotovoltaic devices under high-temperature, high-irradiance conditions using a high view-factor calorimetric setup. Two TPV cell architectures were fabricated on…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these…
We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent.…
We present first systematic studies of the photoinduced phase transition from the ground charge density wave (CDW) state to the normal metallic (M) state in the prototype quasi-1D CDW system K0.3MoO3. Ultrafast non-thermal CDW melting is…
Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate…
We study the Fermi surface contribution to the nonlinear DC photocurrent at quadratic order in a spatially uniform optical field in the ultra-clean limit. In addition to shift and injection current, we find that polarized light incident on…
The goal of ultrathin lightweight photophoretic flyers, or light-flyers for short, is to levitate continuously in Earth's upper atmosphere using only sunlight for propulsive power. We previously reported light-flyers that levitated by…
Many Prussian Blue Analogues are known to show a thermally induced phase transition close to room temperature and a reversible, photo-induced phase transition at low temperatures. This work reports on magnetic measurements, X-ray…
Here we study the single-particle, electronic transport and optical properties of a gapped system described by a simple two-band Hamiltonian with inverted valence bands. We analyze its properties in the three-dimensional (3D) and the…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
An investigation of the selfconsistent ambipolar charge kinetics across a negatively biased semiconducting plasma-solid interface is presented. For the specific case of a thin germanium layer with nonpolar electron-phonon scattering,…
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…
In this work we report on photochromism in transparent thin film samples of oxygen-containing yttrium hydride. Exposure to visible and ultraviolet (UV) light at moderate intensity triggers a decrease in the optical transmission of visible…