Related papers: High performance bilayer-graphene Terahertz detect…

Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the…

Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution…

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…

A graphene bilayer phototransistor (GBL-PT) is proposed and analyzed. The GBL-PT under consideration has the structure of a field-effect transistor with a GBL as the channel and the back and top gates. The positive bias of the back gate…

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…

We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement…

We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling…

We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the…

The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report…

This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…

High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as…

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz…

The electron gas hosted in a two-dimensional solid-state matrix, such as a quantum well or a two-dimensional van der Waals heterostructure, supports the propagation of plasma waves. Nonlinear interactions between plasma waves, due to charge…

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the…

We reveal that there exists a class of graphene structures (a sub-class of bilayer graphene nanoribbons) which has unusually strong optical response in the terahertz (THz) and far infrared (FIR) regime. The peak conductance of terahertz/FIR…

We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The…