Related papers: Fixing the Energy Scale in Scanning Tunneling Micr…
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias…
We consider an Anderson impurity (A) weakly connected to a superconducting electrode (S) on one side and a superconducting or a normal metal electrode (N) on the other side. A general path integral formalism is developed and the response of…
Scanning tunneling microscopy and spectroscopy have become indispensable tools for probing condensed matter at atomic length scales, yet achieving ultimate energy resolution remains a persistent challenge. At mK temperatures, the dynamical…
The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…
A scanning tunneling microscope is used to explore the evolution of electron and Cooper pair transport across single Mn-phthalocyanine molecules adsorbed on Pb(111) from tunneling to contact ranges. Normal-metal as well as superconducting…
Tunneling atomic force microscopy (TUNA) was used at ambient conditions to measure the current-voltage ($I$-$V$) characteristics at clean surfaces of highly oriented graphite samples with Bernal and rhombohedral stacking orders. The…
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates…
Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional…
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra…
A multi-level Anderson model is employed to simulate the system of a nanostructure tunnel junction with any number of one-particle energy levels. The tunneling current, including both shell-tunneling and shell-filling cases, is…
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a…
Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
STM experiments in the tunneling and Andreev regimes on graphene-based moire superconductors (SC) show two distinct energy scales whose origin is mysterious. We express the conductance of a normal-SC interface in terms of Green's functions,…
We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical…
Theoretical results for the ab-plane tunneling conductance in the d-wave model for high Tc superconductors are presented. The d-wave model predicts surface bound states below the maximum gap. A sub-dominant order parameter, stabilized by…
We determine the phase diagram of an Anderson impurity in contact with superconducting and normal-state leads for arbitrary ratio of the gap $\Delta$ to the Kondo temperature $T_K$. We observe a considerable effect of even very weak…
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a…
We used analytical methods to study the interaction of electrons with shunted models consisting of a rectangular, triangular, or delta function. potential barrier in series with a pre-barrier region at zero potential. In each model the…
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and…