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The electronic properties of monolayer tin dulsulphide (ML-SnS2), a recently synthesized metal dichalcogenide, are studied by a combination of first-principles calculations and tight-binding (TB) approximation. An effective lattice…
We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$…
SnxSey crystalline compounds consisting of Sn and Se atoms of varying composition are systematically investigated at pressures from 0 to 100 GPa using the first-principles evolutionary crystal structure search method based on density…
We report the discovery of superconductivity in the ternary aluminide Nb$_{5}$Sn$_{2}$Al, which crystallizes in the W$_{5}$Si$_{3}$-type structure with one-dimensional Nb chains along the $c$-axis. It is found that the compound has a…
Antimony telluroiodide (SbTeI) is predicted to be a promising material in many technological applications based on theoretical simulations, however the bulk structure solution remains elusive. We consolidate SbTeI belonging to the…
Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands…
We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…
Energies of ns[1/2] (n= 6-9), np[j] (n = 6-8), nd[j] (n= 6-7), and 5f[j] states in neutral Au and Au-like ions with nuclear charges Z = 80 - 83 are calculated using relativistic many-body perturbation theory. Reduced matrix elements,…
We present direct spectroscopic modeling of 11 high-S/N observed spectra of the Type Ia SN 2010kg, taken between -10 and +5 days with respect to B-maximum. The synthetic spectra, calculated with the SYN++ code, span the range between 4100…
The structural, electronic and magnetic properties of single layers of Iron Dichloride (FeCl$_{2}$) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl$_{2}$ is 0.17 eV/unit cell more…
This publication describes a re-analysis of previously published data on neutral carbon (C I) utilizing critically examined and improved values for the line energies of the absorption spectrum of molecular iodine to calibrate the transition…
Binary tin sulfides are appealing because of their simple stoichiometry and semiconducting properties and are potentially cost-effective optoelectronic materials. The multivalency of Sn allows yet more intermediate compositions,…
Using resonant two-step laser excitation of trapped $^{232}\mathrm{Th}^+$ ions, we observe 166 previously unknown energy levels of even parity within the energy range from 7.8 to 9.8 eV and angular momenta from $J=1/2$ to $7/2$. We also…
Experimental and theoretical results are reported for photoionization of Ta-like (W$^{+}$) tungsten ions. Absolute cross sections were measured in the energy range 16 to 245 eV employing the photon-ion merged-beam setup at the Advanced…
Single, double, and triple ionization of the C+ ion by a single photon have been investigated in the energy range 286 to 326 eV around the K-shell single-ionization threshold at an unprecedented level of detail. At energy resolutions as low…
Electron density profiles of the Venus' ionosphere are inverted from the Venus Express (VEX) one-way open-loop radio occultation experiments carried out by Shanghai 25 m antenna from November 2011 to January 2012 at solar maximum conditions…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
The quasi-two-dimensional antiferromagnet Ni$_2$P$_2$S$_6$ belongs to the family of magnetic van der Waals compounds that provides a rich material base for the realization of fundamental models of quantum magnetism in low dimensions. Here,…
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition…
The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap…