Related papers: Tuning of CeO$_2$ buffer layers for coated superco…
Flat monolayers of silver II fluoride, which could be obtained by epitaxial deposition on an appropriate substrate, have been recently predicted to exhibit very strong antiferromagnetic superexchange and to have large potential for ambient…
The significantly enhanced superconducting transition temperature ($T_c$) of an FeSe monolayer on SrTiO$_3$(001) substrate has attracted extensive attention in recent years. Here, based on first-principles electronic structure calculations,…
We report a detailed first-principles study of doping in Li$_2$MnO$_3$, in both the dilute doping limit and heavy doping, using hybrid density-functional calculations. We find that Al, Fe, Mo, and Ru impurities are energetically most…
Starting from the effective low energy theory of a doped Mott insulator, we show that the effective carrier density in the underdoped regime agrees with a two - fluid description. Namely, it has distinct temperature independent and…
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric…
High temperature superconductivity in cuprate superconductors is generally considered to be generated from doping the Mott insulators. The fundamental nature of the doped parent compounds as well as the microscopic origin of electron…
Superconductors are a striking example of a quantum phenomenon in which electrons move coherently over macroscopic distances without scattering. The high-temperature superconducting oxides(cuprates) are the most studied class of…
We perform first principles band calculation of the newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$, and study the lattice structure and the fluorine doping dependence of the gap between the valence and conduction bands. We find…
Studies of the doping process can provide a better understanding of the superconducting mechanisms in cuprous oxide materials. In this work, we studied the doping effects on the crystal structure, electric, morphologic and magnetic…
We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+{\delta}} with different degree of…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…
Photoexcited quasiparticle relaxation dynamics in overdoped Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ ($T_{c}$=65~K, hole doping $p$=0.22) single crystal is investigated as a function of temperature. We provide evidence of a $\sim$22~meV…
Infrared reflectance measurements were made with light polarized along the a- and c-axis of both superconducting and antiferromagnetic phases of electron doped Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$. The results are compared to…
We report a systematic study of the Nernst effect in films of the electron doped cuprate superconductor La2-xCexCuO4 (LCCO) as a function of temperature and magnetic field (up to 14 T) over a range of doping from underdoped (x=0.08) to…
Magnetization and ac-susceptibility measurements are used to characterize the mixed phase of the high-temperature cuprate superconductor La$_{2-x}$Sr$_{x}$CuO$_{4}$ over a large range of doping (0.075 $\leq x\leq$ 0.20). The first order…
Aliovalent doping in an oxide material introduces modifications in the valence state of the host cation and often leads to tailoring the oxygen content in the lattice. Moreover, if the dopant cation is larger than the host cation, the…
In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called…
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
Recently it is seen\cite{Nature},that both $\rm{T}_c$ and the buckling of the $CuO_2$ planes goes through a maximum at the same doping level. We show that only for optimal doping concentration the Fermi surface touches the M($0,\pi$) point…