Related papers: Conductance modulation in topological insulator Bi…
Motivated by the experimental difficulty to produce topological insulators (TIs) of the Bi$_2$Se$_3$ family with pure surface-state conduction, we study the effect that the bulk can have on the low-temperature transport properties of gated…
Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum…
In recent years, a class of solid state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
This study examines the magnetotransport response observed in flakes of the 3D topological insulator (TI) Bi2Te3, including indium superconducting electrodes, and demonstrates two critical transitions in the magnetoresistive response with…
Three-dimensional topological insulators represent a new quantum phase of matter with spin-polarized surface states that are protected from backscattering. The static electronic properties of these surface states have been comprehensively…
The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given…
Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
We report on an 800 nm femtosecond laser beam induced giant refractive index modulation and enhancement of near-infrared transparency in topological insulator material Bi2Te3 thin films. An ultrahigh refractive index of up to 5.9 was…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the…
Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization…
Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological…