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Related papers: Thermal spin-transfer torque in magnetic tunnel ju…

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We propose the use of energy bandpass filtering approach in the magnetic tunnel junction device as a route to enhance the thermal spin transfer torque. Using the spin-resolved non-equilibrium Green's function formalism, we harness the…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 Pankaj Priyadarshi , Abhishek Sharma , Bhaskaran Muralidharan

Spin-transfer torque is one of the important physical quantities to understand for successful application of topological insulators to spintronics. In this paper, we present analytical expressions of the spin-transfer torques on a surface…

Mesoscale and Nanoscale Physics · Physics 2019-10-09 Daichi Kurebayashi , Naoto Nagaosa

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…

Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…

Mesoscale and Nanoscale Physics · Physics 2013-11-04 T. Tzen Ong , A. M. Black-Schaffer , W. Shen , B. A. Jones

The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying…

Mesoscale and Nanoscale Physics · Physics 2021-04-07 Abhin Suresh , Marko D. Petrovic , Utkarsh Bajpai , Hyunsoo Yang , Branislav K. Nikolic

Thermally induced magnetization dynamics is currently a flourishing field of research due to its potential application in information technology. We study the paradigmatic system of a magnetic domain wall in a thermal gradient which is…

Superconductivity · Physics 2022-02-08 I. V. Bobkova , A. M. Bobkov , Wolfgang Belzig

Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF)…

In the normal metal/ferromagnetic insulator bilayer (such as Pt/Y$_{3}$Fe$_{5}$O$_{12}$) and the normal metal/ferromagnetic metal/oxide trilayer (such as Pt/Co/AlO$_{x}$) where spin injection and ejection are achieved by the spin Hall…

Mesoscale and Nanoscale Physics · Physics 2015-11-24 Wei Chen , Manfred Sigrist , Jairo Sinova , Dirk Manske

Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…

Materials Science · Physics 2021-10-15 Johannes Mögerle , Robin Schuldt , Johannes Reiff , Jörg Main , Rigoberto Hernandez

We have studied the crossover between thermally assisted and pure quantum tunneling in single crystals of high spin (S=10) uniaxial single molecule magnet Mn12-acetate using micro-Hall effect magnetometry. Magnetic hysteresis experiments…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Louisa Bokacheva , Andrew D. Kent , Marc A. Walters

The spin-transfer-torque-driven (STT-driven) dynamics of a domain wall in an easy-axis rare-earth transition-metal ferrimagnet is investigated theoretically and numerically in the vicinity of the angular momentum compensation point $T_A$,…

Mesoscale and Nanoscale Physics · Physics 2020-08-26 Dong-Hyun Kim , Duck-Ho Kim , Kab-Jin Kim , Kyoung-Woong Moon , Seungmo Yang , Kyung-Jin Lee , Se Kwon Kim

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…

Materials Science · Physics 2013-01-31 Witold Skowroński , Tomasz Stobiecki , Jerzy Wrona , Günter Reiss , Sebastiaan van Dijken

The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Alireza Saffarzadeh

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 A. Manchon

We report a theoretical study of the macroscopic quantum tunneling (MQT) in small Josephson junctions containing randomly distributed two-level systems. We focus on the magnetic field dependent crossover temperature $T_{cr}$ between the…

Superconductivity · Physics 2014-10-17 M. V. Fistul

Applying a magnetic field to a solid changes its thermal-transport properties. Although such magneto-thermal-transport phenomena are usually small effects, giant magneto-thermal resistance has recently been observed in spintronic…

According to the spin-torque model, current-driven magnetic dynamics in ferromagnetic multilayers is determined by the transfer of electron spin perpendicular to the layers' magnetizations. By separating the largest contributions to the…

Materials Science · Physics 2007-05-23 S. Urazhdin

Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…

Materials Science · Physics 2018-09-20 Nguyen Huynh Duy Khang , Yugo Ueda , Pham Nam Hai