Related papers: Thermal spin-transfer torque in magnetic tunnel ju…
Spin-transfer torque (STT) effects on the stationary forced response of nanoscale ferromagnets subject to thermal fluctuations and driven by an ac magnetic field of arbitrary strength and direction are investigated via a generic nanopillar…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
We study the bias-dependent spin-transfer torque in magnetic tunnel junctions in the Stoner model by scattering theory. We show that the in-plane (Slonczewski type) torque vanishes and subsequently reverses its direction when the bias…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the $s$-$d$…
A microscopic calculation is presented for the spin-transfer torques (STT) and damping torques in metallic antiferromagnets (AF). It is found that the sign of the STT is opposite to that in ferromagnets because of the AF transport…
We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
Spin torques in magnetic multilayers are produced by spin polarization $P$ of ferromagnetic (F) layers, and increase with growing $P$. The latter, however, cannot exceed the $P=1$ value found in half metals. We study the $P=1$ case to find…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
In this work, the effect of electrical coupling on stochastic switching of two in-plane superparamagnetic tunnel junctions (SMTJs) is studied, using experimental measurements as well as simulations. The coupling mechanism relies on the…
The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
We develop a theoretical model of magnon-assisted transport in a mesoscopic tunnel junction between a ferromagnetic metal and a normal (non-magnetic) metal. The current response to a bias voltage is dominated by the contribution of elastic…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
Spin transfer torques (STT) occur when electric currents travel through inhomogeneously magnetized systems and are important for the motion of magnetic textures such as domain walls. Since superconductors are easy-plane ferromagnets in…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…