Related papers: Impurity effects in Cu$_2$O
Doping can profoundly affect the electronic- and optical-structure of semiconductors. Here we address the effect of surplus charges on non-radiative (NR) exciton and trion decay in doped semiconducting single-wall carbon nanotubes. The…
Density functional calculations are performed to study the magnetic order of the severely distorted square planar cupric oxide (CuO) and local spin disorder in it in the presence of the transition metal impurities M (= Cr, Mn, Fe, Co and…
The effect of adding non-magnetic impurities (NMI), such as Zn or Li, to high-Tc cuprates is studied applying Monte Carlo techniques to a spin-fermion model. It is observed that adding Li is qualitatively similar to doping with equal…
Electron-doped cuprates require not only electron doping by chemical substitution but also post-growth reduction annealing for realizing superconductivity. However, electron concentration can also be varied by reduction annealing, making it…
The Hall effect and its associated anomalies offer an important means for describing superconducting property in cuprate compounds. Here, we investigate the electron- and hole-doping effects (implemented through Al- and Ag-doping,…
We propose a new approach to theoretical description of doped cuprate like $La_{2-x}Sr_{x}CuO_4$ and $YBa_2Cu_3O_{6+x}$, assuming phase separation and treating it as inhomogeneous composite material, containing the dielectric and metallic…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high efficiency solar cells. Our findings demonstrate that the…
Conventional superconductivity is robust against the addition of impurities unless the impurities are magnetic in which case superconductivity is quickly suppressed. Here we present a study of the cuprate superconductor…
We report resistivity measurements in underdoped YBa$_{2}$Cu$_{3}$O$_{6.6} $and overdoped Tl$_{2}$Ba$_{2}$CuO$_{6+x}$ single crystals in which the concentration of defects in the CuO$_{2}$ planes is controlled by electron irradiation. Low…
Fabricating electrochemical energy storage devices demands significant energy for drying cell components to ensure optimal performance. The development of new, water-tolerant materials would represent a tremendous advance in cost savings…
When materials are in the diffusive regime, i.e. when the scattering length is less than the sample size, charge transport is mediated by diffusons and cooperons. We argue that these charge carriers are not always spread out throughout the…
After irradiation of Fe-Cr alloys of low purity (model alloys of F-M steels), minor solute elements as P, Ni and Si have been shown to create solute clusters which significantly contribute to hardening and might be associated with small…
We report an ab-initio comparative study of the electric-field-gradient tensor (EFG) and structural relaxations introduced by acceptor (Cd) and donor (Ta) impurities when they replace cations in a series of binary oxides: TiO2, SnO2, and…
We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in…
Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…
Based on a self-consistent $t$-matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial…
We have calculated formation energies and position of the defect levels for all native defects and for a variety of donor and acceptor impurities employing first-principles total-energy calculations. An analysis of the numerical results…
Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in…
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…