Related papers: Quantitative characterization of the spin orbit to…
We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe$_3$GeTe$_2$. For zero magnetic field, the observed response depends as a square of the longitudinal…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
We theoretically investigate the orbital effects of an in-plane magnetic field on the spectrum of a quantum dot embedded in a two-dimensional electron gas (2DEG). We derive an effective two-dimensional Hamiltonian where these effects enter…
We make a number of precise experimental predictions for observing the various magnetic phases and the quantum phase transitions between them in the $\nu$=2 bilayer quantum Ha ll system. In particular, we analyze the effect of an external…
The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
We present electrical measurements of high-frequency magnetic dynamics excited by spin-polarized currents in Co/Cu/Ni80Fe20 nanopillar devices, with a magnetic field applied perpendicular to the sample layers. As a function of current and…
Spintronics is an emerging form of electronics based on the electrons' spin degree of freedom for which materials with robust half-metallic ferromagnet (HMF) character are very attractive. Here we determine the structural stability,…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
In this work we numerically test a model of Hall magnetohydrodynamics in the presence of a strong mean magnetic field, the reduced Hall MHD model (RHMHD) derived by Gomez et al., with the addition of weak compressible effects. The main…
Taking advantage of the anomalous Hall effect, we electrically probe low-frequency magnetization fluctuations at room temperature in a thin ferromagnetic Pt/Co/AlO$_x$ layer stack with perpendicular magnetic anisotropy. We observe a strong…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
Effective field theories encode the predictions of a quantum field theory at low energy. The effective theory has a fairly low ultraviolet cutoff. As a result, loop corrections are small, at least if the effective action contains a term…
Generation of perpendicular effective magnetic field or perpendicular spins ({\sigma}z) is central for the development of energy-efficient, scalable, and external-magnetic-field-free spintronic memory and computing technologies. Here, we…
Magnetic resonance imaging and spectroscopy rely on the magnetic fields generated by radiofrequency volume coils to acquire high-quality data. Consequently, a comprehensive understanding of electromagnetic field behavior in RF volume coils…
Electron spin transport in a disordered metal is theoretically studied from the hydrodynamic viewpoint focusing on the role of electron vorticity. The spin-resolved momentum flux density of electrons is calculated taking account of the…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…
A semiclassical constrained Hamiltonian system which was established to study dynamical systems of matrix valued non-Abelian gauge fields is employed to formulate spin Hall effect in noncommuting coordinates at the first order in the…
We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique…