Related papers: An \emph{ab initio} study on split silicon-vacancy…
Silicon vacancy (SiV) centers in diamonds have emerged as a very promising candidate for quantum emitter due to their narrow emission line resulting in their indistinguishability. While many different quantum emitters have already been used…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
We report the optical observation of lead-vacancy (PbV) centers in diamond fabricated by Pb ion implantation and subsequent high-temperature annealing (2100 {\deg}C) under high pressure (7.7 GPa). Their optical properties were characterized…
Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the…
Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to…
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal…
The nitrogen-vacancy (NV) center in diamond is supposed to be a building block for quantum computing and nanometer scale metrology at ambient conditions. Therefore, precise knowledge of its quantum states is crucial. Here, we experimentally…
Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. In this work we study the optical properties of Xe related color centers implanted into…
The electronic spins of the nitrogen-vacancy centers (NV centers) in Chemical-Vapor-Deposition (CVD) grown diamonds form ideal probes of magnetic fields and temperature, as well as promising qu-bits for quantum information processing.…
Cobalt-related impurity centers in diamond have been studied using first principles calculations. We computed the symmetry, formation and transition energies, and hyperfine parameters of cobalt impurities in isolated configurations and in…
The nitrogen-vacancy (NV) center in diamond is a widely-utilized system due to its useful quantum properties. Almost all research focuses on the negative charge state (NV$^-$) and comparatively little is understood about the neutral charge…
Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the…
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are…
Individual, luminescent point defects in solids so called color centers are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual…
In this paper, we study the photoinduced switching of the nitrogen-vacancy (NV) center between two different charge states - negative (NV-) and neutral (NV0) at liquid helium temperature. The conversion of NV- to NV0 on a single defect is…
The fluorescent nitrogen-vacancy (NV) defect in diamond has remarkable photophysical properties, including high photostability, which allows stable fluorescence emission for hours; as a result, there has been much interest in using…
The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into…
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As…
Solid-state quantum emitters are an important platform for quantum information processing. The fabrication of the emitters with stable photon frequency and narrow linewidth is a fundamental issue, and it is essential to understand optical…
We review the electronic level structure of the nitrogen-vacancy in diamond and some common experimental techniques to study its optical properties at low temperatures. We then summarize several recent experiments and advances in using…