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Nitrogen-vacancy center in diamond is a solid state defect qubit with favorable coherence time up to room temperature which could be harnessed in several quantum enhanced sensor and quantum communication applications, and has a potential in…
Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic,…
The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…
The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an…
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded…
The negatively charged nickel vacancy center (NiV$^-$) in diamond is a promising spin qubit candidate with predicted inversion symmetry, large ground state spin orbit splitting to limit phonon-induced decoherence, and emission in the…
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are…
Tin-vacancy (SnV) color centers were created in diamond by ion implantation and subsequent high temperature annealing up to 2100 {\deg}C at 7.7 GPa. The first-principles calculation suggests that the large atom of tin can be incorporated…
The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success,…
The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for…
Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in…
An ensemble of silicon vacancy centers in diamond (\ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of \ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these…
Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear…
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per…
Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon vacancy centers in diamond (SiV) offer excellent physical properties…
Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum…
The negatively charged nitrogen-vacancy defect (NV)$^-$ in diamond has attracted much attention in recent years in qubit and biological applications. The negative charge is donated from nearby nitrogen donors that could limit or stem the…
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and…