Related papers: Gate-defined coupled quantum dots in topological i…
Quantum-state engineering, i.e., active manipulation over the coherent dynamics of suitable quantum-mechanical systems, has become a fascinating prospect of modern physics. Here we discuss the dynamics of two interacting electrons in a…
A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements…
Owing to the Klein tunneling phenomenon, the permanent confinement or localization of electrons within a graphene quantum dot is unattainable. Nonetheless, a constant magnetic field can transiently ensnare an electron within the quantum…
We investigate the dynamics of interacting electrons confined to two types of quantum dot system, when driven by an external AC field. We first consider a system of two electrons confined to a pair of coupled quantum dots by using an…
We present a theory of quantum circuits based on logical qubits encoded in chirality of electron spin complexes in lateral gated semiconductor triple quantum dot molecules with one electron spin in each dot. Using microscopic Hamiltonian we…
We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate…
We study inelastic cotunneling through a strong Coulomb-blockaded quantum dot subject to a static magnetic field and a perpendicular circularly-polarized magnetic field using a quantum Langevin equation approach. Our calculation predicts an…
Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…
Consider a bunch of interacting electrons confined in a quantum dot. The later is suddenly coupled to semi-infinite biased leads at an initial instant $t=0$. We identify the dominant contribution to the ergodic current in the off-resonant…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
We explore potentials that break time-reversal symmetry to confine the surface states of 3D topological insulators into quantum wires and quantum dots. A magnetic domain wall on a ferromagnet insulator cap layer provides interfacial states…
A quantum computer based on an asymmetric coupled dot system has been proposed and shown to operate as the controlled-NOT-gate. The basic idea is (1) the electron is localized in one of the asymmetric coupled dots. (2)The electron transfer…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
We consider the energy spectrum and the spin-parity structure of the eigenstates for a quantum dot made of a strong topological insulator. Using the effective low-energy theory in a finite-length cylinder geometry, numerical calculations…
Protected by the chiral symmetry, three dimensional chiral topological insulators are characterized by an integer-valued topological invariant. How this invariant could emerge in physical observables is an important question. Here we show…
This paper proposes a universal microscopic model for the shallow confinement regime of single-electron tunneling devices. We consider particle escape from a quantum well generically emerging as a bifurcation in a smooth electrostatic…
We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to…
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…