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Related papers: Multiferroicity in V-doped PbTiO$_{3}$

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We study theoretically the multiferroic dynamics in a composite one-dimensional system consisting of BaTiO3 multiferroically coupled to an iron chain. The method treats the magnetization and the polarization as thermodynamic quantities…

Materials Science · Physics 2013-09-18 Paul P. Horley , Alexander Sukhov , Chenglong Jia , Eduardo Martınez , Jamal Berakdar

Multiferroic materials attract considerable interest because of the wide range of potential applications such as spintronic devices, data storage and sensors. As a strong candidate for the applications among the limited list of single-phase…

Materials Science · Physics 2016-09-21 J. S. Hwang , Y. J. Yoo , J. -H. Kang , K. H. Lee , B. W. Lee , S. Y. Park , Y. P. Lee

The archetypical strongly correlated Mott-phenomena compound V2O3 is known to show a paramagnetic metal-insulator transition driven by doping with chromium atoms and/or (negative) pressure. Via charge self-consistent density-functional…

Strongly Correlated Electrons · Physics 2014-09-17 Daniel Grieger , Frank Lechermann

The hexagonal multiferroic oxide YMnO$_3$ has demonstrated applications in various fields and is widely researched due to its interesting properties. Since Mn(3d)--O(2p) interactions predominate close to the Fermi level, doping in the…

Materials Science · Physics 2025-10-22 Kazi Mazba Kamal , Alamgir Kabir

The polar magnet CaBaCo$_{4}$O$_{7}$ is known to exhibit the largest magnetic-field-driven electric polarization change ($\Delta P$) associated with an antiferromagnetic (AFM)-ferrimagnetic (FIM) transition in a narrow temperature range…

Materials Science · Physics 2022-08-10 M. Gen , A. Miyake , H. Yagiuchi , Y. Watanabe , A. Ikeda , Y. H. Matsuda , M. Tokunaga , T. Arima , Y. Tokunaga

Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here,…

Topological insulators are a new class of insulators with conducting surface state. Most of the topological insulators are chalcogenides, where a tiny amount of chalcogen vacancy destroys the predicted bulk insulating state and results in a…

Strongly Correlated Electrons · Physics 2026-02-20 Sathishkumar M , Asha Ann Abrahama , Rajesh Kumar Sahu , Soma Banik , Soham Manni

Bound Magnetic Polarons (BMP) have been proposed to play an important role in doped wide band gap semiconductors. We report the experimental evidence supporting polaronic magnetism and the role of defects on it. Temperature variation of…

Materials Science · Physics 2021-10-26 Gyanti Prakash Moharana , Rahul Kothari , S. K. Singh , P. D. Babu , Harish Kumar Narayanan

The stoichiometric antiferromagnetic insulator EuTiO$_3$ is proximate to a ferroelectric phase. Whereas cation substitution has been used as a tuning parameter to introduce charge carriers and manipulate the magnetism, the effects of…

Unlike the widely studied $s$-type two-gap superconductor MgB$_2$, the chemically similar compounds ZrB$_2$ and HfB$_2$ do not superconduct above 1 K. Yet, it has been shown that small amounts of self- or extrinsic doping (in particular…

Superconductivity · Physics 2017-03-10 N. Barbero , T. Shiroka , B. Delley , T. Grant , A. J. S. Machado , Z. Fisk , H. -R. Ott , J. Mesot

Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of…

Tuning the valence state and electronic structure of catalytically active sites is crucial for improving Fenton and Fenton-like reactions, which rely on the efficient activation of the H2O2 molecule. Pure TiO2, however, has inadequate…

Structural and magnetic properties of the doped terbium manganites (Tb,A)MnO3 (A = Gd, Dy and Ho) have been investigated using first-principles calculations and further confirmed by subse- quent experimental studies. Both computational and…

Materials Science · Physics 2015-07-14 Vinit Sharma , A. McDannald , M. Staruch , R. Ramprasad , M. Jain

In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic…

Materials Science · Physics 2018-03-28 Xiaohui Liu , Evgeny Y. Tsymbal , Karin M. Rabe

We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0…

Mesoscale and Nanoscale Physics · Physics 2015-06-17 Ting Cao , Zhenglu Li , Steven G. Louie

Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as…

Materials Science · Physics 2007-05-23 J. Blinowski , P. Kacman , T. Dietl

The high Curie temperature multiferroic compound, CuO, has a quasidegenerate magnetic ground state that makes it prone to manipulation by the so called ``order-by-disorder'' mechanism. First principle computations supplemented with Monte…

While doping is widely used for tuning physical properties of perovskites in experiments, it remains a challenge to exactly know how doping achieves the desired effects. Here, we propose an empirical and computationally tractable model to…

Materials Science · Physics 2019-01-30 J. Liu , L. Jin , Z. Jiang , L. Liu , L. Himanen , J. Wei , N. Zhang , D. Wang , C. -L. Jia

A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…

Materials Science · Physics 2016-04-04 Hyungyu Jin , Bartlomiej Wiendlocha , Joseph P. Heremans