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Related papers: Bandstructure and mobility variations in p-type Si…

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Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE)…

Materials Science · Physics 2015-06-17 Alireza Faghaninia , Joel W. Ager , Cynthia S. Lo

A density functional theory study of the structural and electronic properties and relative stability of narrow SP3 silicon nanotubes of different growth orientations is presented. All nanotubes studied and their corresponding wire…

Mesoscale and Nanoscale Physics · Physics 2012-12-05 Alon Hever , Jonathan Bernstein , Oded Hod

We present a comprehensive first-principles study of the ballistic transport properties of low dimensional nanostructures such as linear chains of atoms (Al, C) and carbon nanotubes in presence of defects. A novel approach is introduced…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Arrigo Calzolari , Nicola Marzari , Ivo Souza , Marco Buongiorno Nardelli

The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by traditional semiconductors usually employed for p-MOS such as…

In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. WTe2-MoS2…

Materials Science · Physics 2017-09-13 Fan Chen , Hesameddin Ilatikhameneh , Yaohua Tan , Daniel Valencia , Gerhard Klimeck , Rajib Rahman

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Jiangjiang J. Gu , Heng Wu , Yiqun Liu , Adam T. Neal , Roy G. Gordon , Peide D. Ye

The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system,…

Mesoscale and Nanoscale Physics · Physics 2024-07-04 Rafael L. H. Freire , F. Crasto de Lima , Roberto H. Miwa , A. Fazzio

We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow…

Materials Science · Physics 2009-11-11 Eleni Ziambaras , Per Hyldgaard

Electronic transport in low-dimensional structures, such as thin bodies, nanosheets, nanoribbons and nanowires, is strongly affected by electron and phonon confinement, in addition to interface roughness. Here we use a quantum-transport…

Mesoscale and Nanoscale Physics · Physics 2025-03-10 Bimin Cai , Maarten L. Van de Put , Massimo V. Fischetti

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

It has been recently shown that a nanostructure composed of a quantum dot surrounded by a quantum ring possesses a set of very unique characteristics that make it a good candidate for future nanoelectronic devices. Its main advantage is the…

Mesoscale and Nanoscale Physics · Physics 2016-04-15 Iwona Janus-Zygmunt , Barbara Kedzierska , Anna Gorczyca-Goraj , Elzbieta Zipper , Maciej M. Maska

In this work we theoretically explore the effect of dimensionality on the thermoelectric power factor of InAs nanowires by coupling atomistic tight-binding calculations to the Linearized Boltzmann transport formalism. We consider nanowires…

Materials Science · Physics 2020-12-24 Damiano Archetti , Neophytos Neophytou

Atomic-scale calculations for the dynamics of the 90$^0$ partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are…

Materials Science · Physics 2008-02-03 K. Stokbro , L. B. Hansen , B. I. Lundqvist

One- and two-dimensional bilayer systems are examples of ultra-tunable quantum materials that are considered as the basis for the new generation of electronic and photonic devices. Here we develop a general theory of the electron band…

Mesoscale and Nanoscale Physics · Physics 2022-06-22 D. V. Chalin , D. I. Levshov , A. E. Myasnikova , S. B. Rochal

We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 Gengchiau Liang , Jie Xiang , Neerav Kharche , Gerhard Klimeck , Charles M. Lieber , Mark Lundstrom

Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel…

Mesoscale and Nanoscale Physics · Physics 2013-04-02 Ferdows Zahid , Lei Liu , Yu Zhu , Jian Wang , Hong Guo

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are…

Materials Science · Physics 2009-11-11 Takayuki Makino , Akira Ohtomo , A. Tsukazaki , M. Kawasaki , H. Koinuma

We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications…

Materials Science · Physics 2007-12-03 S. Haas , A. F. Stassen , G. Schuck , K. P. Pernstich , D. J. Gundlach , B. Batlogg , U. Berens , H. -J. Kirner

The current article investigated the band structure in the presence and absence of spin-orbit coupling (SOC), examined the Z2 invariants, and investigated the detailed angle-dependent magneto-transport of up to 10 T (Tesla) and down to 2 K…

Materials Science · Physics 2024-07-10 N. K. Karn , Yogesh Kumar , Geet Awana , V. P. S. Awana

In a recent paper Liang {\it et al.} [Nature {\bf 411}, 665 (2001)] showed experimentally, that metallic nanotubes, strongly coupled to external electrodes, may act as coherent molecular waveguides for electronic transport. The experimental…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 S. Krompiewski , J. Martinek , J. Barnas