Related papers: 1/f noise in graphene
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…
Temperature- and magnetic field-dependent electrical noise and electrical resistivity measurements were carried out on epitaxial thin films of a large bandwidth La0.7Sr0.3MnO3 and a disordered intermediate bandwidth (La0.5Pr0.2)Ba0.3MnO3…
We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of…
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…
We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former…
We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moir\'e pattern gives…
The statistical properties of the carrier density profile of graphene in the ground state in the presence particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi \textit{et al.}…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…
We report on a theoretical study of the effects of time-dependent fields on electronic transport through graphene nanoribbon devices. The Fabry-P\'{e}rot interference pattern is modified by an ac gating in a way that depends strongly on the…
We investigate the role that noise plays in the hysteretic dynamics of a suspended nanotube or a graphene sheet subject to an oscillating force. We find that not only the size but also the position of the hysteresis region in these systems…
We review the energy spectrum and transport properties of several types of one- dimensional superlattices (SLs) on single-layer and bilayer graphene. In single-layer graphene, for certain SL parameters an electron beam incident on a SL is…
Nanostructuring materials at small scales enables control over their physical properties, revealing behaviors not observed at larger dimensions. This strategy is particularly effective in two-dimensional (2D) materials, where surface…
We investigate high-harmonic generation in graphene heterostructures consisting of metallic nanoribbons separated from a graphene sheet by either a few-nanometer layer of aluminum oxide or an atomic monolayer of hexagonal boron nitride. The…
We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the…
1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of…
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in…
Individual metallic single-wall carbon nanotubes show unsual non-Ohmic transport behaviors at high bias fields. For low resistance contact samples, the differential conductance dI/dV increases with increasing bias, reaching a maximum at…
Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…
We investigated the atomic structures, Raman spectroscopic and electrical transport properties of individual graphene nanoribbons (GNRs, widths ~10-30 nm) derived from sonochemical unzipping of multi-walled carbon nanotubes (MWNTs).…