Related papers: Quantum Conductivity for Metal-Insulator-Metal Nan…
Gap plasmonics deals with the properties of surface plasmons in the narrow region between two metallic nanoparticles forming the gap. For sub-nanometer gap distances electrons can tunnel between the nanoparticles leading to the emergence of…
The quantum tunneling effects between two metallic plates are studied using the time dependent density functional theory. Results show that the tunneling is mainly dependent on the separation and the initial local field of the interstice…
Nanoelectronics devices, such as quantum dot systems or single-molecule transistors, consist of a quantum nanostructure coupled to a macroscopic external electronic circuit. Thermoelectric transport between source and drain leads is…
We present a microscopic model for calculating the AC conductivity of a finite length line junction made up of two counter or co-propagating single mode quantum Hall edges with possibly different filling fractions. The effect of…
A quantum interference effect is discussed for subgap tunneling over a distance comparable to the coherence length, which is a consequence of ``advanced-advanced'' and ``retarded-retarded'' transmission modes [Altland and Zirnbauer, Phys.…
We consider the process of quantum tunneling between the superconducting and paramagnetic states of a nanometer-scale superconducting grain placed in a magnetic field. The grain is supposed to be coupled via tunneling junction to a normal…
Our theoretical examination of second and third harmonic generation from metal-based nanostructures predicts that nonlocal and quantum tunneling phenomena can significantly exceed expectations based solely on local, classical…
Using a scattering technique based on a parametrized linear combination of atomic orbitals Hamiltonian, we calculate the ballistic quantum conductance of multi-wall carbon nanotubes. We find that inter-wall interactions not only block some…
We study the quantum tunnel effect through a potential barrier employing a semiclassical formulation of quantum mechanics based on expectation values of configuration variables and quantum dispersions as dynamical variables. The evolution…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
Quantum tunneling allows electrons to be transferred between two regions separated by an energetically forbidden barrier. Performing a position measurement that finds a particle in the barrier forces the tunneling electrons to transition…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
Analyzing recent experimental results, we find similar behaviors and a deep analogy between three-junction superconducting qubits and suspended carbon nanotubes. When these different systems are ac-driven near their resonances, the…
We analyze inelastic cotunneling through an interacting quantum dot subject to an ambient magnetic field in the weak tunneling regime under a non-adiabatic time-dependent bias-voltage. Our results clearly exhibit photon-assisted satellites…
We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus…
We demonstrate switching behavior and quantized conductance at room temperature in percolating films of nanoparticles. Our experiments and complementary simulations show that switching and quantization result from formation of atomic scale…
We present a theory of non-equilibrium superconducting proximity effect in an interacting quantum dot induced by a time-dependent tunnel coupling between dot and a superconducting lead. The proximity effect, that is established when the…
Electronic transport in a triple quantum dot shuttle device in the presence of an ac field is analyzed within a fully quantum mechanical framework. A generalized density matrix formalism is used to describe the time evolution for electronic…
The unknown quantum electronic conductance across nanojunctions made of silicon-doped carbon wires between carbon leads is investigated. This is done by an appropriate generalization of the phase field matching theory for the…
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium…