Related papers: Novel Giant Magnetoresistance Model using Multiple…
We present calculations of quantized conductance and magnetoresistance in nanosize point contacts between two ferromagnetic metals. When conductance is open for only one conduction electrons spin-projection, the magnitude of…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
We present a model for the positive extreme magnetoresistance (XMR), recently observed in a plethora of metallic systems, such as PtSn$_4$, PtBi$_2$, PdCoO$_2$, WTe$_2$, NbSb$_2$, NbP, TaSb$_2$, LaSb, LaBi, ZrSiS and MoTe$_2$. The model is…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction…
The magnon current holds substantial importance in facilitating the transfer of angular momentum in spin-based electronics. However, the magnon current in three-dimensional magnetic materials remains orders of magnitude too small for…
We argue that colossal magnetoresistance is a critical phenomenon and propose a mechanism to describe it. The mechanism relies on the halfmetallic behavior of the materials showing colossal magnetoresistance, and yields a correlated…
A novel, general Green's function technique for elastic spin-dependent transport calculations is presented, which (i) scales linearly with system size and (ii) allows straightforward application to general tight-binding Hamiltonians (spd in…
We study the role of diamagnetic effects on the transport properties of metallic magnetic multilayers to elucidate whether they can explain the Giant Magnetoresistance (GMR) effect observed in those systems. Realistic Fermi surface…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
Within the framework of a two-band tight-binding model, we have performed calculations of giant magnetoresistance, exchange coupling and thermoelectric power (TEP) for a system consisting of three magnetic layers separated by two…
Transport in undoped graphene is related to percolating current patterns in the networks of {\em N-} and {\em P}-type regions reflecting the strong bipolar charge density fluctuations. Transmissions of the {\em P-N} junctions, though small,…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
In order to better understand the role of possible couplings in determining the giant magnetoresistance (GMR) behavior of multilayers, a knowledge of the dependence of the $GMR$ on magnetic field $H$ appears to be useful. Since a few…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the…
It is shown that the current-perpendicular-to-plane giant magneto-resistance (CPP-GMR) oscillations, in the ballistic regime, are strongly correlated with those of the exchange coupling (J). Both the GMR and J are treated on equal footing…