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We investigate the possibility of realizing a disorder-induced topological Floquet spectrum in two-dimensional periodically-driven systems. Such a state would be a dynamical realization of the topological Anderson insulator. We establish…
We address the question of whether an anisotropic gap $d_{x^2-y^2}$ symmetry is compatible with localized states in the normal phase. The issue is important in high $T_c$ superconductors where a superconductor to insulator transition is…
Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This…
Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
We analyze critical behavior of superfluid density $\rho_s$ in strongly disordered superconductors near superconductor-insulator transition and compare it with the behavior of the spectral gap $\Delta$ for collective excitations. We show…
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…
We present an experimental study of bilayers of a disordered Ag metal layer close to the metal-insulator transition and an Indium Oxide film which is on the insulating side of the superconductor-insulator-transition. Our results show that…
The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…
We study the nature of the zero-temperature phase transition between a d-wave superconductor and a Mott insulator in two dimensions. In this ``quantum confinement transition'', spin and charge are confined to form the electron in the Mott…
We investigate the tunneling conductance of superconductor-insulator-normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side of the junction that is electrically driven and can…
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical…
At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an…
We utilize a glass-like structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. In this material, the terminal ethylene…
Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects…
We study the nature of the superfluid--insulator quantum phase transition in a one-dimensional system of lattice bosons with off-diagonal disorder in the limit of large integer filling factor. Monte Carlo simulations of two strongly…
The Mott insulating state formed from bosons is ubiquitous in solid He-4, cold atom systems, Josephson junction networks and perhaps underdoped high-Tc superconductors. We predict that close to the quantum phase transition to the…
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a…
Cuprates show multiphase complexity that has hindered physicists search for the mechanism of high T_c for many years. A fingerprint of electronic scale invariance has been reported recently by Fratini et al. by detecting the structural…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…